Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD

Applied Surface Science

Volumn 257, Issue 11, 2011, Pages 5052-5058

  Kshirsagar, Abhijeet ^a,b   Nyaupane, Pradeep ^a   Bodas, Dhananjay ^c   Duttagupta, S P ^a   Gangal, S A ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b UNIVERSITY OF PUNE   (India)

^c AGHARKAR RESEARCH INSTITUTE   (India)

Author keywords

Inductively coupled plasma; Low temperature; Silicon nitride

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION RATES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITRIDES; PLASMA CVD; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; TEMPERATURE; THERMAL BARRIER COATINGS; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

FOURIER TRANSFERS; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURES; LOW-TEMPERATURE SILICONS; MICRO RAMAN SPECTROSCOPY; PHYSICAL AND CHEMICAL PROPERTIES; SILICON NITRIDE FILM; X RAY PHOTOELECTRON SPECTRA;

INDUCTIVELY COUPLED PLASMA;

EID: 79951681651     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.01.020     Document Type: Article

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