Pulsed laser deposition of non-stoichiometric silicon nitride (SiN x) thin films

Applied Physics A: Materials Science and Processing

Volumn 79, Issue 4-6, 2004, Pages 1525-1527

  Lackner, J M ^a,b   Waldhauser, W ^a   Ebner, R ^a,b   Beutl, M ^a   Jakopic, G ^a   Leising, G ^a   Hutter, H ^c   Rosner, M ^c  

^a JOANNEUM RESEARCH   (Austria)

^b MATERIALS CENTER LEOBEN FORSCHUNG GMBH   (Austria)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CRYSTAL STRUCTURE; LASER BEAM EFFECTS; MONOCHROMATORS; OPTICAL RESOLVING POWER; PULSED LASER DEPOSITION; REFRACTIVE INDEX; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; STOICHIOMETRY; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRONIC MASS FLOW CONTROLLERS; ELECTROSTATIC CHARGING; ROOM TEMPERATURE; YAG LASERS;

SILICON NITRIDE;

EID: 4344704792     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-2838-0     Document Type: Conference Paper

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