Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNx

Solid-State Electronics

Volumn 49, Issue 3, 2005, Pages 409-412

  Jin, Z ^a,b   Neumann, S ^a   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; PASSIVATION; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM; SILICON NITRIDE;

BASE-COLLECTOR JUNCTIONS; BASE-EMITTER JUNCTIONS; DOPING DENSITY; GAASSB;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 12344287454     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.11.001     Document Type: Article

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