Spectroscopic ellipsometry for in-line monitoring of silicon nitrides

Thin Solid Films

Volumn 455-456, Issue , 2004, Pages 794-797

  Cook, Candi S ^a   Daly, Terry ^b   Liu, Ran ^b   Canonico, Michael ^b   Xie, Q ^b   Gregory, R B ^b   Zollner, Stefan ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b MOTOROLA INC   (United States)

Author keywords

Metal insulator metal capacitor; Silicon nitride; Spectroscopic ellipsometry; Tauc Lorentz model

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELLIPSOMETRY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

METAL INSULATOR METAL CAPACITOR; SPECTROSCOPIC ELLIPSOMETRY; TAUC LORENTZ MODEL;

THIN FILMS;

EID: 17144437200     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.265     Document Type: Conference Paper

References (4)

1. Diebold A. Handbook of Silicon Semiconductor Metrology. 2001;Marcel Dekker, New York. See especially the chapter by G.E. Jellison, Jr., p. 723.
2. Tompkins H.G., McGahan W.A. Spectroscopic Ellipsometry and Reflectometry. 1999;Wiley, New York.
3. Zollner S., Apen E. Seiler D.G., Diebold A.C., Shaffner T.J., McDonald R., Bullis W.M., Smith P.J., Secula E.M. Characterization and Metrology for ULSI Technology 2000. 2001;532 American Institue of Physics, Melville, NY.
4. S. Zollner, D. Zarr, In: 2000 IEEE International Symposium on Compound Semiconductors, IEEE, 2000, p. 13.