Correlation between stress and structure in chemically vapour deposited silicon nitride films

Thin Solid Films

Volumn 162, Issue C, 1988, Pages 129-143

  Noskov, A G ^a   Gorokhov, E B ^a   Sokolova, G A ^a   Trukhanov, E M ^a   Stenin, S I ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

FILMS--STRUCTURE; STRESSES;

CHEMICAL BONDS; HETEROSYSTEM INTERFACE;

SILICON NITRIDE;

EID: 0024056374     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(88)90201-5     Document Type: Article

References (26)

1. Generation of Dislocations Induced by Chemical Vapor Deposited Si3N4Films on Silicon
2. Some Properties of Vapor Deposited Silicon Nitride Films Using the SiH[sub 4]-NH[sub 3]-H[sub 2] System
3. Characterization of Silicon Nitride Films
4. Thermal Expansion Coefficient of a Pyrolitically Deposited Silicon Nitride Film
5. Dislocation Generation at Si[sub 3]N[sub 4] Film Edges on Silicon Substrates and Viscoelastic Behavior of SiO[sub 2] Films
6. Theory of defects in amorphous semiconductors
7. Solid Solution in the Silicon Nitride-Silicon Dioxide System
8. Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substrates