Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNx

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 777-783

  Jin, Z ^a   Prost, W ^a   Neumann, S ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ETCHING; INTEGRATED OPTOELECTRONICS; LEAKAGE CURRENTS; OHMIC CONTACTS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; SILANES; SILICON NITRIDE; SULFUR;

CURRENT GAINS; GUMMEL PLOTS; OVERPASSIVATION PROCESSES; SURFACE RECOMBINATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 3142669371     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1757656     Document Type: Article

References (15)

1. R. N. Nottenburg, H. Temkin, M. B. Panish, and R. A. Hamm, Appl. Phys. Lett. 49, 1112 (1986).
2. M. Ida, K. Kurishima, and N. Watanabe, IEEE Electron Device Lett. 23, 694 (2002).
3. R. Driad, Z. H. Lu, S. Charbonneau, W. R. McKinnon, S. Laframboise, P. J. Poole, and S. P. McAlister, Appl. Phys. Lett. 73, 665 (1998).
4. R. Driad, S. R. Laframboise, Z. H. Lu, S. P. McAlister, and W. R. McKinnon, Solid-State Electron. 43, 1445 (1999).
5. Z. Jin, S. Neumann, W. Prost, and F.-J. Tegude, Phys. Status Solidi A 201, 1017 (2004).
6. S. Shikata and H. Hayashi, J. Appl. Phys. 70, 3721 (1991).
7. T. Kikawa, S. Takatani, H. Masuda, and T. Tanoue, Jpn. J. Appl. Phys. 38, 1195 (1999).
8. H. Wang, G. I. Ng, H. Yang, and K. Radhakrishnan, Jpn. J. Appl. Phys. 41, 1059 (2002).
9. Z. Jin, T. Hashizume, and H. Hasegawa, Jpn. J. Appl. Phys. 40, 2757 (2001).
10. D. Caffin, L. Bricard, J. L. Courant, L. S. How Kee Chun, B. Lescaut, A. M. Duchenois, M. Megheli, J. L. Benchimol, and P. Launay, International Conference on InP and Related Materials, Cape Cod, 1997, p. 637.
11. Z. Jin, S. Neumann, W. Prost, and F.-J. Tegude, 11th Gallium Arsenide Application Symposium, Munich, 2003, p. 259.
12. Z. Jin, F. Otten, T. Reimann, S. Neumann, W. Prost, and F.-J. Tegude, Solid State Electron. (to be published).
13. A. Wiersch, C. Heedt, S. Schneiders, R. Tilders, F. Buchali, W. Kuebart, W. Prost, and F. J. Tegude, J. Non-Cryst. Solids 187, 334 (1995).
14. William Liu, Handbook of III-V Heterojunction Bipolar Transistors (Wiley-Interscience, New York, 1998).
15. S. Tiwari and D. J. Frank, IEEE Trans. Electron Devices 36, 2105 (1989).