Molecular dynamics calculation of the fluorine ions' potential energies in AlGaN/GaN heterostructures

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Yuan, L ^a   Wang, M J ^a   Chen, K J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTALS; DYNAMICS; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; IONS; MODULATION; MOLECULAR DYNAMICS; NITRIDES; POTENTIAL ENERGY; QUANTUM CHEMISTRY; SYSTEMS ENGINEERING;

ALGAN/GAN; ALGAN/GAN HETEROJUNCTIONS; ALGAN/GAN HETEROSTRUCTURES; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CARRIER DENSITIES; CATION SITES; FLUORINE INCORPORATIONS; FLUORINE IONS; MATERIAL SYSTEMS; MOLECULAR DYNAMICS SIMULATIONS; NITRIDE SEMICONDUCTORS; PHYSICAL MECHANISMS; SUBSTITUTIONAL GROUPS;

FLUORINE;

EID: 58149233762     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3028208     Document Type: Article

References (10)

1. Y. Cai, Y. Zhou, K. M. Lau, and K. J. Chen, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2006.881054 53, 2207 (2006).
2. D. W. Jenkins and J. D. Dow, Phys. Rev. B 0163-1829 10.1103/PhysRevB.39. 3317 39, 3317 (1989).
3. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
4. K. Harafuji, T. Tsuchiya, and K. Kawamura, Phys. Status Solidi C 0, 2240 (2003). 0031-8957
5. G. Henkelman and H. Jo'nsson, J. Chem. Phys. 0021-9606 10.1063/1.1323224 113, 9978 (2000).
6. P. A. Wolff, Phys. Rev. 95, 1415 (1954). 0031-899X
7. L. Yuan, W. Li, M. Yu, H. Ji, K. Zhan, R. Huang, X. Zhang, Y. Wang, J. Zhang, and H. Oka, Nucl. Instrum. Methods Phys. Res. B 0168-583X 251, 390 (2006).
8. J. Lindhard and M. Scharff, Phys. Rev. 124, 128 (1961). 0031-899X
9. L. Yuan, M. J. Wang, and K. J. Chen, Appl. Phys. Lett. 0003-6951 10.1063/1.2896646 92, 102109 (2008).
10. C. Yi, R. Wang, W. Huang, W. C.-W. Tang, K. M. Lau, and K. J. Chen, 2007 International Electron Device Meeting (IEDM07), Washington, DC (unpublished), p. 389.