AlGaN/GaN dual-channel lateral field-effect rectifier with punchthrough breakdown immunity and low on-resistance

IEEE Electron Device Letters

Volumn 31, Issue 1, 2010, Pages 5-7

  Zhou, Chunhua ^a   Chen, Wanjun ^a   Piner, Edwin L ^b   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b NITRONEX CORPORATION   (United States)

Author keywords

AlGaN GaN lateral field effect rectifier; Dual channel; On resistance; Punchthrough breakdown immunity

Indexed keywords

ALGAN/GAN; DUAL CHANNEL; FIELD-EFFECT; ON-RESISTANCE; PUNCH-THROUGH;

GALLIUM NITRIDE; MICROSTRIP DEVICES; SEMICONDUCTOR JUNCTIONS;

ELECTRIC RECTIFIERS;

EID: 72949084824     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2034761     Document Type: Article

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