Schottky-ohmic drain AlGaN/GaN normally off HEMT with reverse drain blocking capability

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 668-670

  Zhou, Chunhua ^a   Chen, W ^a,b   Piner, Edwin L ^c,d   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c NITRONEX CORPORATION   (United States)

^d TEXAS STATE UNIVERSITY   (United States)

Author keywords

AlGaN GaN normally off high electron mobility transistor (HEMT); fluorine plasma ion implantation; reverse drain blocking capability; Schottky ohmic drain

Indexed keywords

ALGAN/GAN; BLOCKING CAPABILITY; FLUORINE PLASMA; NORMALLY OFF; SCHOTTKY;

DRAIN CURRENT; ELECTRON MOBILITY; FLUORINE; GALLIUM NITRIDE; ION IMPLANTATION; LITHIUM BATTERIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77954143182     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2048885     Document Type: Article

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