Integrated voltage reference generator for GaN smart power chip technology

IEEE Transactions on Electron Devices

Volumn 57, Issue 4, 2010, Pages 952-955

  Wong, King Yuen ^a   Chen, Wanjun ^a,b   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

AlGaN GaN HEMT; GaN; Planar integration; Smart power; Voltage reference; Wide bandgap

Indexed keywords

ALGAN/GAN HEMT; ALGAN/GAN HEMTS; FUNCTIONAL BLOCK; HIGH-VOLTAGES; INTEGRATED VOLTAGE; LOW-POWER CONSUMPTION; LOW-VOLTAGE; MIXED SIGNAL; MONOLITHICALLY INTEGRATED; PERIPHERAL DEVICES; POWER DEVICES; REFERENCE GENERATOR; REFERENCE VOLTAGES; ROOM TEMPERATURE; SCHOTTKY DIODES; SENSING CIRCUITS; SMART POWER; SMART POWER APPLICATIONS; SUBTHRESHOLD; TEMPERATURE RANGE; VOLTAGE REFERENCE; WIDE BAND GAP;

ENERGY GAP; GALLIUM ALLOYS; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; SCHOTTKY BARRIER DIODES; VOLTAGE MEASUREMENT;

GALLIUM NITRIDE;

EID: 77950296867     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2041510     Document Type: Article

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