Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Wang, M J ^a   Yuan, L ^a   Chen, K J ^a   Xu, F J ^b   Shen, B ^b  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DATA ANALYSIS; DEVICE APPLICATIONS; DIFFUSION MECHANISMS; DYNAMIC PROCESS; EXPERIMENTAL OBSERVATIONS; FLUORINE IONS; FLUORINE PLASMAS; GAN CRYSTALS; IN DIFFUSIONS; LOCAL CONFINEMENTS; MOLECULAR DYNAMIC SIMULATIONS; OUT DIFFUSIONS; SAMPLE SURFACES; SURFACE EFFECTS; THERMAL ANNEALING PROCESS; THERMAL STABILITIES; TIME OF FLIGHT-SECONDARY ION MASS SPECTROMETRIES; VACANCY-ASSISTED DIFFUSIONS;

DIFFUSION; GALLIUM ALLOYS; GALLIUM NITRIDE; ION BOMBARDMENT; ION IMPLANTATION; MOLECULAR DYNAMICS; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; STABILIZATION; THERMODYNAMIC STABILITY; VACANCIES;

FLUORINE;

EID: 65449172771     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3106561     Document Type: Article

References (17)

1. Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2005.851122 26, 435 (2005).
2. Y. Cai, Y. G. Zhou, K. M. Lau, and K. J. Chen, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2006.881054 53, 2207 (2006).
3. R. M. Chu, C. S. Suh, M. H. Wong, N. Fichtenbaum, D. Brown, L. McCarthy, S. Keller, F. Wu, J. S. Speck, and U. K. Mishra, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.889238 28, 781 (2007).
4. R. Wang, Y. Cai, C. W. Tang, K. M. Lau, and K. J. Chen, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.882522 27, 793 (2006).
5. Y. Cai, Z. Q. Cheng, C. W. Tang, K. M. Lau, and K. J. Chen, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2005.881002 53, 2223 (2006).
6. W. J. Chen, K. Y. Wong, W. Huang, and K. J. Chen, Appl. Phys. Lett. 0003-6951 10.1063/1.2951615 92, 253501 (2008).
7. N. Hayafuji, N. Hayafuji, Y. Yamamoto, N. Yoshida, T. Sonoda, S. Takamiya, and S. Mitsui, Appl. Phys. Lett. 0003-6951 10.1063/1.113412 66, 863 (1995).
8. N. Hayafuji, Y. Yamamoto, T. Ishida, and K. Sato, Appl. Phys. Lett. 0003-6951 10.1063/1.117823 69, 4075 (1996).
9. C. W. Yi, R. N. Wang, W. Huang, C. W. Tang, K. M. Lau, and K. J. Chen, Tech. Dig.-Int. Electron Devices Meet. 2007, 389.
10. A. Basu, V. Kumar, and I. Adesida, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2789444 25, 2607 (2007).
11. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
12. L. Yuan, M. J. Wang, and K. J. Chen, Appl. Phys. Lett. 0003-6951 10.1063/1.2896646 92, 102109 (2008).
13. R. G. Wilson, S. J. Pearton, C. R. Abernathy, and J. M. Zavada, Appl. Phys. Lett. 0003-6951 10.1063/1.113178 66, 2238 (1995).
14. S. O. Kucheyev, J. S. Williams, and S. J. Pearton, Mater. Sci. Eng. R. 0927-796X 10.1016/S0927-796X(01)00028-6 33, 51 (2001).
15. L. Yuan, M. J. Wang, and K. J. Chen, Tech. Dig.-Int. Electron Devices Meet. 2008, 543.
16. L. Yuan, M. J. Wang, and K. J. Chen, J. Appl. Phys. 0021-8979 10.1063/1.3028208 104, 116106 (2008).
17. M. J. Wang, L. Yuan, C. C. Cheng, C. D. Beling, and K. J. Chen, Appl. Phys. Lett. 0003-6951 94, 061910 (2009).