AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability

Electronics Letters

Volumn 46, Issue 6, 2010, Pages 445-446

  Zhou, C ^a   Chen, W ^a,c   Piner, E L ^b   Chen, K J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b NITRONEX CORPORATION   (United States)

^c UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROJUNCTION; AS-GROWN; CATHODE ELECTRODES; CURRENT-LIMITING FUNCTIONS; DRIFT REGIONS; FIELD-EFFECT; FORWARD CURRENTS; ON STATE CURRENT; PINCH OFF VOLTAGE; REVERSE BREAKDOWN VOLTAGE; SCHOTTKY CONTACTS; SELF-LIMITED; TWO-DIMENSIONAL GAS; VOLTAGE DROP;

GALLIUM NITRIDE; HETEROJUNCTIONS; OHMIC CONTACTS; SUPERCONDUCTING CABLES;

ELECTRIC RECTIFIERS;

EID: 77949739731     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.3402     Document Type: Article

References (9)

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