High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 328-331

  Cai, Yong ^a   Cheng, Zhiqun ^a   Yang, Zhenchuan ^a   Tang, Chak Wah ^a   Lau, Kei May ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN; CF4 plasma treatment; Direct coupled FET logic (DCFL); Enhancement mode (E mode); High electron mobility transistor (HEMT); High temperature electronics; IC; Threshold voltage

Indexed keywords

CURRENT DENSITY; ELECTRIC INVERTERS; HIGH TEMPERATURE OPERATIONS; MONOLITHIC INTEGRATED CIRCUITS; THRESHOLD VOLTAGE;

ENHANCEMENT MODE (E-MODE); LOGIC-LOW NOISE MARGIN; OSCILLATION FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34247574775     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895391     Document Type: Article

References (13)

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