Gate-recessed normally-off GaN-on-Si HEMT using a new O2- BCl3 digital etching technique

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2010-2012

  Burnham, Shawn D ^a   Boutros, Karim ^a   Hashimoto, Paul ^a   Butler, Colleen ^a   Wong, Danny W S ^a   Hu, Ming ^a   Micovic, Miroslav ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

AlGaN GaN; Electrical properties; High mobility transistors; Plasma etching

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; ATOMIC LAYER ETCHING; BORON TRICHLORIDE; BREAKDOWN VOLTAGE; DEPLETION MODES; DEVICE LAYOUT; DRAIN LEAKAGE CURRENT; ELECTRICAL PROPERTY; ENHANCEMENT MODES; ETCH PROCESS; ETCH RATES; ETCHING TECHNIQUE; GATE RECESS; HIGH MOBILITY; HIGH VOLTAGE DEVICES; PROCESS STEPS; SI WAFER; THRESHOLD VOLTAGE VARIATION; TREATMENT PROCESS;

BORON; DIGITAL DEVICES; DRAIN CURRENT; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FLUORINE; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; OXYGEN; PLASMA ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; SILICON WAFERS; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77955831621     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983644     Document Type: Conference Paper

References (13)

1. S. D. Burnham, Improved understanding and control of magnesium doped gallium nitride by plasma assisted molecular beam epitaxy, School of Electrical and Computer Engineering (Atlanta, Ga: Georgia Institute of Technology, 2007).
2. K. S. Boutros, S. D. Burnham, D. W. Wong et al., at: IEDM 2009 (accepted), Balimore, MD 2009.
3. A. R. Boyd, F. Schulte, O. Rockenfeller et al., at: IWN, Montreux, Switzerland 2008.
4. M. Germain, S. Degroote, J. Derluyn et al., at: ICNS-8, Jeju, Korea 2009.
5. M. A. Khan, Q. Chen, C. J. Sun et al., Appl. Phys. Lett. 68, 514-516 (1996).
6. Y. Cai, Y. Zhou, K. J. Chen et al., IEEE Electron Device Lett. 26, 435-437 (2005).
7. J. S. Moon, D. Wong, T. Hussain et al., Device Research Conference, 2002, 60th DRC. Conference Digest 23-24 (2002).
8. A. Basu, V. Kumar and I. Adesida, J. Vacuum Sci. Technol. B 25, 2607-2610 (2007).
9. C. Yi, R. Wang, W. Huang et al., at: Technical Digest - International Electron Devices Meeting, IEDM, Washington, DC 2007.
10. A. Ludviksson, M. Xu and R. M. Martin, Surf. Sci. 277, 282-300 (1992).
11. X. Zhao, J. W. Chung, and T. Palacios, at: International Conference on Nitride Semiconductors, Las Vegas, NV 2007.
12. D. Buttari, S. Heikman, S. Keller et al., at: Proceedings IEEE Lester Eastman Conference on High Performance Devices, Newark, DE 2002.
13. D. Buttari, A. Chini, T. Palacios et al., Appl. Phys. Lett. 83, 4779-4781 (2003).