-
1
-
-
33947182926
-
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-based Plasma Treatment: From Depletion Mode to Enhancement Mode
-
Sep
-
Y. Cai, Y. G. Zhou, K. M. Lau, and K. J. Chen "Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-based Plasma Treatment: From Depletion Mode to Enhancement Mode," IEEE Trans. Electron Devices, vol. 53, No. 9, pp. 2207-2215, Sep. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.9
, pp. 2207-2215
-
-
Cai, Y.1
Zhou, Y.G.2
Lau, K.M.3
Chen, K.J.4
-
2
-
-
22944461728
-
High-Performance Enhancement-Mode AlGaN/GaN HEMTs using Fluoride-based Plasma Treatment
-
Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, "High-Performance Enhancement-Mode AlGaN/GaN HEMTs using Fluoride-based Plasma Treatment," IEEE Electron Device Letters, Vol. 26, No. 7, pp. 435-437, 2005.
-
(2005)
IEEE Electron Device Letters
, vol.26
, Issue.7
, pp. 435-437
-
-
Cai, Y.1
Zhou, Y.G.2
Chen, K.J.3
Lau, K.M.4
-
3
-
-
46049087530
-
High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors
-
W. Chen, K.-Y. Wong, W. Huang, and K. J. Chen, "High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors," Appl. Phys. Lett., vol. 92, 253501, 2008.
-
(2008)
Appl. Phys. Lett
, vol.92
, pp. 253501
-
-
Chen, W.1
Wong, K.-Y.2
Huang, W.3
Chen, K.J.4
-
4
-
-
64549163189
-
Monolithic Integration of Lateral Field Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters
-
San Francisco, USA, Dec. 15-17
-
W. Chen, K.-Y. Wong, and K. J. Chen, "Monolithic Integration of Lateral Field Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters," 2008 Int. Electron Device Meeting (IEDM08), San Francisco, USA, Dec. 15-17, 2008.
-
(2008)
2008 Int. Electron Device Meeting (IEDM08)
-
-
Chen, W.1
Wong, K.-Y.2
Chen, K.J.3
-
5
-
-
33947146088
-
Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment
-
Sep
-
Y. Cai, Z. Cheng, W. C. K. Tang, K. M. Lau, and K. J. Chen "Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment," IEEE Trans. Electron Devices, vol. 53, No. 9, pp. 2223-2230, Sep. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.9
, pp. 2223-2230
-
-
Cai, Y.1
Cheng, Z.2
Tang, W.C.K.3
Lau, K.M.4
Chen, K.J.5
-
6
-
-
34247574775
-
High Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits
-
May
-
Y, Cai, Z. Cheng, Z. Yang, W. C.-W. Tang, K. M. Lau, and K. J. Chen, "High Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits," IEEE Electron Device Lett., Vol. 28, No. 5, pp. 328-331, May, 2007.
-
(2007)
IEEE Electron Device Lett
, vol.28
, Issue.5
, pp. 328-331
-
-
Cai, Y.1
Cheng, Z.2
Yang, Z.3
Tang, W.C.-W.4
Lau, K.M.5
Chen, K.J.6
-
7
-
-
33746502580
-
Planar Integration of E/D-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment
-
Aug
-
R. Wang, Y. Cai, W. Tang, K. M. Lau, and K. J. Chen, "Planar Integration of E/D-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment," IEEE Electron Device Letters, vol. 27, No. 8, pp. 633-635, Aug. 2006.
-
(2006)
IEEE Electron Device Letters
, vol.27
, Issue.8
, pp. 633-635
-
-
Wang, R.1
Cai, Y.2
Tang, W.3
Lau, K.M.4
Chen, K.J.5
-
8
-
-
0035839827
-
High-temperature electron transport properties in AlGaN/GaN heterostructures
-
N. Maeda, K. Tsubaki, T. Saitoh, and N. Kobayashi, "High-temperature electron transport properties in AlGaN/GaN heterostructures," Appl. Phys. Lett., vol. 79, pp. 1634-1636, 2001.
-
(2001)
Appl. Phys. Lett
, vol.79
, pp. 1634-1636
-
-
Maeda, N.1
Tsubaki, K.2
Saitoh, T.3
Kobayashi, N.4
|