Ultraviolet InAlGaN light emitting diodes grown on hydride vapor phase epitaxy AlGaN/sapphire templates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 A, 2006, Pages 3905-3908

  Kneissl, Michael ^a   Yang, Zhihong ^a   Teepe, Mark ^a   Knollenberg, Cliff ^a   Johnson, Noble M ^a   Usikov, Alexander ^b   Dmitriev, Vladimir ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b TDI Inc   (United States)

Author keywords

GaN; HVPE; InAlGaN; LED; Light emitting diodes; MOCVD; MOVPE; Ultraviolet

Indexed keywords

INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; SAPPHIRE; ULTRAVIOLET RADIATION;

HVPE; INALGAN; ULTRAVIOLET;

LIGHT EMITTING DIODES;

EID: 33646886613     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3905     Document Type: Article

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