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Volumn 310, Issue 23, 2008, Pages 4932-4934

Effect of the AIN nucleation layer growth on AlN material quality

Author keywords

A1. High resolution X ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Aluminum nitride; B1. Nitrides

Indexed keywords

ALUMINA; ALUMINUM COMPOUNDS; CRYSTAL GROWTH; DIFFRACTION; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; MICROSCOPIC EXAMINATION; NITRIDES; NUCLEATION; SINGLE CRYSTALS; STRUCTURAL ANALYSIS; VAPOR PHASE EPITAXY; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

EID: 56249127483     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.083     Document Type: Article
Times cited : (76)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.