|
Volumn 310, Issue 23, 2008, Pages 4932-4934
|
Effect of the AIN nucleation layer growth on AlN material quality
c
AIXTRON AG
(Germany)
|
Author keywords
A1. High resolution X ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Aluminum nitride; B1. Nitrides
|
Indexed keywords
ALUMINA;
ALUMINUM COMPOUNDS;
CRYSTAL GROWTH;
DIFFRACTION;
EPITAXIAL GROWTH;
HIGH RESOLUTION ELECTRON MICROSCOPY;
MICROSCOPIC EXAMINATION;
NITRIDES;
NUCLEATION;
SINGLE CRYSTALS;
STRUCTURAL ANALYSIS;
VAPOR PHASE EPITAXY;
VAPORS;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
A1. HIGH-RESOLUTION X-RAY DIFFRACTION;
A3. METALORGANIC VAPOR-PHASE EPITAXY;
ALN LAYERS;
B1. ALUMINUM NITRIDE;
B1. NITRIDES;
DIFFRACTOMETRY;
DISLOCATION DENSITIES;
FLOW CONDITIONS;
HIGH RESOLUTIONS;
HIGH TEMPERATURES;
MATERIAL QUALITIES;
METAL ORGANIC;
NUCLEATION LAYERS;
STRUCTURAL QUALITIES;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
|
EID: 56249127483
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.07.083 Document Type: Article |
Times cited : (76)
|
References (11)
|