AlGaN-based deep ultraviolet light-emitting diodes grown on epitaxial AlN/sapphire templates

Japanese Journal of Applied Physics

Volumn 47, Issue 1, 2008, Pages 43-46

  Sumiya, Shigeaki ^a,b   Zhu, Youhua ^a   Zhang, Jicai ^a   Kosaka, Kei ^b   Miyoshi, Makoto ^a,b   Shibata, Tomohiko ^b   Tanaka, Mitsuhiro ^b   Egawa, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

Aigan; AIN; Growth; LED; MOCVD; Ultraviolet

Indexed keywords

ALUMINUM COMPOUNDS; COMPRESSIVE STRESS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES;

CRYSTAL-QUALITY; DEEP ULTRAVIOLET LIGHT-EMITTING DIODE (UV-LED); ELECTROLUMINESCENCE SPECTRA; SUPERLATTICE STRUCTURES;

EPITAXIAL FILMS;

EID: 38549155544     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.43     Document Type: Article

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