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Applied Physics Express

Volumn 3, Issue 4, 2010, Pages

Improvement in output power of 280-nm deep ultraviolet light-emitting diode by using AIGaN multi quantum wells

(5) Fujioka, Akira a Misaki, Takao a Murayama, Takashi a Narukawa, Yukio a Mukai, Takashi a

a NICHIA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DC OPERATION; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; EMISSION WAVELENGTH; EPITAXIAL STRUCTURE; EXTERNAL QUANTUM EFFICIENCY; FABRICATED DEVICE; FORWARD VOLTAGE; JUNCTION HEATING; MULTI QUANTUM WELLS; MULTI-CHIP; OUTPUT POWER; P-TYPE ACTIVATION; PULSE INJECTION; SPECTRAL LINE WIDTH;

FABRICATION; LIGHT EMISSION; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION;

LIGHT EMITTING DIODES;

EID: 77950675125 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.041001 Document Type: Article

Times cited : (133)

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