High-temperature growth of AlN in a production scale 11×2″ MOVPE reactor

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1799-1801

  Brunner, F ^a   Protzmann, H ^b   Heuken, M ^b   Knauer, A ^a   Weyers, M ^a   Kneissl, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ALN; ALN FILMS; ALN LAYERS; GAS-PHASE REACTIONS; HARDWARE MODIFICATIONS; HIGH DENSITY; HIGH QUALITY; HIGH-TEMPERATURE GROWTH; MATERIAL PROPERTY; MATERIAL QUALITY; MOVPE; PLANETARY REACTORS; PRODUCTION SCALE; RAMAN MEASUREMENTS;

GROWTH TEMPERATURE; MORPHOLOGY; NITRIDES; OPTICAL PROPERTIES; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION;

SEMICONDUCTOR GROWTH;

EID: 56249114935     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778658     Document Type: Conference Paper

References (5)

1. Y. Taniyasu, M. Kasu, and T. Makimoto, Nature 441, 325 (2006).
2. Z. Chen, R. S. Qhalid Fareed, M. Gaevski, V. Adivarahan, J. W. Yang, M. Asif Khan, J. Mei, and F.A. Ponce, Appl. Phys. Lett. 89, 081905 (2006).
3. M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, J. Cryst. Growth 298, 257 (2007).
4. A. Dadgar, A. Krost, J. Christen, B. Bastek, F. Bertram, A. Krtschil, T. Hempel, J. Bläsig, U. Haboeck, and A. Hoffmann, J. Cryst. Growth 297, 306 (2006).
5. S. Nicolay, E. Feltin, J.-F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Illegems, and N. Grandjean, Appl. Phys. Lett. 88, 151902 (2006).