High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 6, 2009, Pages 1199-1204

  Tsuzuki, Hirotoshi ^a   Mori, Fumiaki ^a   Takeda, Kenichiro ^a   Ichikawa, Tomoki ^a   Iwaya, Motoaki ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a   Yoshida, Harumasa ^b   Kuwabara, Masakazu ^b   Yamashita, Yoji ^b   Kan, Hirofumi ^b  

^a MEIJO UNIVERSITY   (Japan)

^b CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; CHARACTERISTIC TEMPERATURE; DC CURRENT; DISLOCATION DENSITIES; EXTERNAL QUANTUM EFFICIENCY; LASER DIODES; MOVPE; MQW ACTIVE LAYER; OUTPUT POWER; PEAK EMISSION WAVELENGTH; TEMPERATURE RANGE; THRESHOLD CURRENTS; UNDERLYING LAYERS; UV-A LIGHT; UV-EMITTER; WAVELENGTH REGIONS;

GALLIUM; LADDER NETWORKS; LIGHT EMITTING DIODES;

ALUMINUM;

EID: 67649972136     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880784     Document Type: Article

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