Yttria-doped zirconia thin films deposited by atomic layer deposition ALD: A structural, morphological and electrical characterisation

Journal of Physics and Chemistry of Solids

Volumn 64, Issue 9-10, 2003, Pages 1761-1770

  Bernay, Cécile ^a,b   Ringuedé, Armelle ^a   Colomban, Philippe ^c   Lincot, Daniel ^a   Cassir, Michel ^a  

^a PSL RESEARCH UNIVERSITY   (France)

^b RENAULT   (France)

^c UMR 8233 CNRS Université Pierre et Marie Curie   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEPOSITION; DOPING (ADDITIVES); MORPHOLOGY; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SOLID OXIDE FUEL CELLS; STOICHIOMETRY; YTTRIUM; ZIRCONIA;

ATOMIC LAYER DEPOSITION;

THIN FILMS;

EID: 0041736492     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(03)00105-7     Document Type: Conference Paper

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