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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 1, 2011, Pages 0110191-0110196

Thick benzocyclobutene etching using high density SF6/O 2 plasmas

(6) Chen, Qianwen a,b Zhang, Dingyou a Tan, Zhimin b Wang, Zheyao b Liu, Litian b Lu, Jian Qiang a

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BUTENES; CONCENTRATION (PROCESS); CURING; ELECTROMAGNETIC INDUCTION; INDUCTIVELY COUPLED PLASMA; SILICON COMPOUNDS; VACUUM;

BENZOCYCLOBUTENE; CHAMBER PRESSURE; ETCHING CHARACTERISTICS; ETCHING CONDITION; ETCHING RATE; GAS FLOWS; HIGH DENSITY; HOT PLATES; VACUUM CHAMBERS;

REACTIVE ION ETCHING;

EID: 79551628442 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3532828 Document Type: Conference Paper

Times cited : (10)

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