Evaluation of BCB bonded and thinned wafer stacks for three-dimensional integration

Journal of the Electrochemical Society

Volumn 155, Issue 5, 2008, Pages

  Kwon, Yongchai ^a,c   Jindal, Anurag ^a   Augur, Rod ^b,e   Seok, Jongwon ^a,d,f   Cale, Timothy S ^a,g   Gutmann, Ronald J ^a   Lu, Jian Qiang ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b SEMATECH   (United States)

^c Inha Technical College   (South Korea)

^d MICRON TECHNOLOGY INC   (United States)

^e ADVANCED MICRO DEVICES   (United States)

^f Chung Ang University   (South Korea)

^g ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; INTEGRATED CIRCUITS; MECHANICAL PROPERTIES; SILICA;

BENZOCYCLOBUTENE (BCB); THREE-DIMENSIONAL INTEGRATION; WAFER STACKS;

WAFER BONDING;

EID: 41849120878     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2844449     Document Type: Article

References (27)

1. J. A. Davis, R. Venkatesan, A. Kaloyeros, M. Beylansky, S. J. Souri, K. Banerjee, K. C. Saraswat, A. Rahman, R. Reif, and J. D. Meindl, Proc. IEEE 0018-9219 10.1109/5.915376, 89, 305 (2001).
2. J. -Q. Lu, Y. Kwon, A. Jindal, K. W. Lee, J. J. McMahon, G. Rajagopalan, A. Y. Zeng, R. P. Kraft, B. Altemus, B. Xu, in Proceedings of the VLSI Multilevel Interconnection Conference (VMIC), IMIC, p. 445 (2002).
3. K. W. Guarini, A. W. Topol, M. Ieong, R. Yu, L. Shi, M. R. Newport, D. J. Frank, D. V. Singh, G. M. Cohen, S. V. Nitta, Tech. Dig.-Int. Electron Devices Meet., 2002, 943.
4. K. W. Lee, T. Nakamura, K. Sakuma, K. T. Park, H. Shimazutsu, N. Miyakawa, K. Y. Kim, H. Kurino, and M. Koyanagi, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.39.2473, 39, 2473 (2000).
5. J. -Q. Lu, Y. Kwon, G. Rajagopalan, M. Gupta, J. McMahon, K. -W. Lee, R. P. Kraft, J. F. McDonald, T. S. Cale, R. J. Gutmann, in Proceedings of the IEEE International Interconnect Technology Conference (IITC), IEEE, p. 78, (2001).
6. Y. Kwon, J. -Q. Lu, R. P. Kraft, J. F. McDonald, R. J. Gutmann, and T. S. Cale, in Polymer Interfaces and Thin Films, A. Karim, T. P. Russel, C. W. Frank, and, P. F. Nealey, Editors, p. DD12.18.1, Materials Research Society, Pittsburgh, PA (2001).
7. Y. Kwon, Ph.D. Thesis, Rensselaer Polytechnic Institute, Troy, NY (2003).
8. Y. Kwon, A. Jindal, J. J. McMahon, J. -Q. Lu, R. J. Gutmann, and T. S. Cale, in Materials, Technology and Reliablility for Advanced Interconnects and Low-k Dielectrics, MRS PV 766, p. E5.8.1, T. McKerrow, J. Leu, O. Kraft, and, T. Kikkawa, Editors, Materials Research Society, Pittsburgh, PA (2003).
9. F. Niklaus, P. Enoksson, P. Griss, E. Kalvesten, and G. Stemme, J. Microelectromech. Syst., 10, 525 (2001).
10. N. P. Hacker, MRS Bull., 22, 33 (1997). 0883-7694
11. S. F. Hahn, S. J. Martin, and M. L. McKelvy, Macromolecules, 25, 1539 (1992). 0024-9297
12. M. E. Mills, P. Townsend, D. Castillo, S. Martin, and A. Achen, Microelectron. Eng. 0167-9317 10.1016/S0167-9317(96)00061-5, 33, 327 (1997).
13. C. Lingk, M. E. Gross, and W. L. Brown, J. Appl. Phys. 0021-8979 10.1063/1.372166, 87, 2232 (2000).
14. Y. Kwon, J. Seok, J. -Q. Lu, T. S. Cale, and R. J. Gutmann, J. Electrochem. Soc. 0013-4651 10.1149/1.1869252, 152, G286 (2005).
15. Y. Kwon, J. Seok, J. -Q. Lu, T. S. Cale, and R. J. Gutmann, J. Electrochem. Soc. 0013-4651 10.1149/1.2172551, 153, G347 (2006).
16. Y. Kwon, J. Seok, J. -Q. Lu, T. S. Cale, and R. J. Gutmann, J. Electrochem. Soc. 0013-4651 10.1149/1.2717504, 154, H460 (2007).
17. A. Jindal, J. -Q. Lu, Y. Kwon, G. Rajagopalan, J. J. McMahon, A. Y. Zeng, T. S. Cale, and R. J. Gutmann, in Materials, Technology and Reliablility for Advanced Interconnects and Low-k Dielectrics, MRS PV 766, p. E5.7.1, T. McKerrow, J. Leu, O. Kraft, and, T. Kikkawa, Editors, Materials Research Society, Pittsburgh, PA (2003).
18. P. G. Charalambides, J. Lund, A. G. Evans, and R. M. McMeeking, J. Appl. Mech., 111, 77 (1989). 0021-8936
19. P. G. Charalambides, H. C. Cao, J. Lund, and A. G. Evans, Mech. Mater. 0167-6636 10.1016/0167-6636(90)90047-J, 8, 269 (1990).
20. R. J. Hohlfelder, D. A. Maidenberg, R. H. Dauskardt, Y. Wei, and J. W. Hutchinson, J. Mater. Res., 16, 243 (2001). 0884-2914
21. S. Luo and C. P. Wong, IEEE Trans. Adv. Packag., 27, 345 (2004). 1521-3323
22. S. Guo, I. Lundstrom, and H. Arwin, Appl. Phys. Lett. 0003-6951 10.1063/1.116291, 68, 1910 (1996).
23. K. H. Yang, J. H. Im, and R. H. Heistand, IEEE Trans. Adv. Packag. 1521-3323 10.1109/6040.909622, 24, 33 (2001).
24. J. -Q. Lu, A. Jindal, Y. Kwon, J. J. McMahon, M. Rasco, R. Augur, T. S. Cale, and R. J. Gutmann, in Proceedings of the IEEE International Interconnect Technology Conference (IITC), IEEE, p. 74 (2003).
25. J. T. L. Thong, W. K. Choi, and C. W. Chong, Sens. Actuators, A 0924-4247 10.1016/S0924-4247(97)80511-0, 63, 243 (1997).
26. C. Picu, Personal communication, Rensselaer Polytechnic Institute, Troy, NY.
27. J. -Q. Lu, K. W. Lee, Y. Kwon, G. Rajagopalan, J. McMahon, B. Altemus, M. Gupta, E. Eisenbraun, B. Xu, A. Jindal, in Advanced Metallization Conference (AMC) 2002, Materials Research Society, pp. 45-51 (2003).