Effects of the polymer residues on via contact resistance after reactive ion etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1000-1007

  Ko, Hyoung Soo ^a   Nah, Jae Woong ^b   Paik, Kyung W ^b   Park, Y ^c  

^a Hynix Semiconductor Inc   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ATOMIC FORCE MICROSCOPY; CHLOROFLUOROCARBONS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; ORGANOMETALLICS; OXYGEN; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON WAFERS; SPIN COATING; SURFACE PHENOMENA; SURFACE ROUGHNESS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONTACT RESISTANCE; POLYMER RESIDUES;

POLYETHERIMIDES;

EID: 0035998526     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1479364     Document Type: Conference Paper

References (17)