Characterization of reactive ion etching of benzocyclobutente in SF 6/O2 plasmas

Microelectronic Engineering

Volumn 87, Issue 10, 2010, Pages 1945-1950

  Chen, Qianwen ^a   Wang, Zheyao ^a   Tan, Zhiming ^a   Liu, Litian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Anisotropy; Benzocyclobutene (BCB); Etching rate; Residue; RIE; Sulfur hexafluoride

Indexed keywords

ANISOTROPIC ETCHING; ANISOTROPY; BUTENES; SULFUR; SULFUR HEXAFLUORIDE;

BENZOCYCLOBUTENE; ETCHING CHARACTERISTICS; ETCHING RATE; ISOTROPIC ETCHING; OPTIMAL PROCESSING; PROCESSING PARAMETERS; RESIDUE; SACRIFICIAL LAYER;

REACTIVE ION ETCHING;

EID: 79551623493     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.165     Document Type: Article

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