Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures

Microelectronics Reliability

Volumn 51, Issue 2, 2011, Pages 370-375

  Arslan, Engin ^a   Bütün, Serkan ^a   Afak, Yasemin ^b   Uslu, Habibe ^b   Tascioglu, Ilke ^b   Altindal, Semsettin ^b   Özbay, Ekmel ^a  

^a BILKENT UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/ALN/GAN; BARRIER HEIGHTS; ELECTRICAL CHARACTERIZATION; ELECTRICAL PARAMETER; ENERGY DENSITY DISTRIBUTIONS; FORWARD BIAS; HETEROSTRUCTURES; HIGH ELECTRON MOBILITY; IDEALITY FACTORS; INSULATOR LAYER; INTERFACE STATE DENSITY; IV CHARACTERISTICS; LOW-HIGH; MIS STRUCTURE; REVERSE BIAS; ROOM TEMPERATURE; SERIES RESISTANCES; VOLTAGE DEPENDENCE; ZERO-BIAS;

GALLIUM; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; SILICON NITRIDE;

SCHOTTKY BARRIER DIODES;

EID: 79551476717     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.08.022     Document Type: Conference Paper

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