Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs

Solid-State Electronics

Volumn 52, Issue 5, 2008, Pages 632-636

  Desmaris, V ^a   Shiu, J Y ^a,b   Rorsman, N ^a   Zirath, H ^a   Chang, E Y ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

AlGaN GaN HEMTs; Microwave FETs; Passivation; Transient analysis

Indexed keywords

ALUMINUM COMPOUNDS; MICROWAVES; NITRIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS (HEMT); MICROWAVE PERFORMANCE;

SILICON COMPOUNDS;

EID: 41449084800     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.10.022     Document Type: Article

References (21)

1. Pearton S.J., Ren F., Zhang A.P., and Lee K.P. Fabrication and performance of GaN electronic devices. Mater Sci Eng R R30 (2000) 55-212
2. Trew R.J., Bilbro G.L., Kuang W., Liu Y., and Yin H. Microwave AlGaN/GaN HFETs. IEEE Microw Mag 6 (2005) 56-66
3. Wu Y.F., et al. 30-W/mm GaN HEMTs by field plate optimization. IEEE Electron Device Lett 25 3 (2004) 117-119
4. Inoue T. 30 GHz-band 5.8 W high-power AlGaN/GaN heterojunction-FET. In: IEEE MTT-S international microwave symposium digest, vol. 3; 2004. p. 1949-52.
5. Chini A., et al. 12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate. Electron Lett 40 (2004) 73-74
6. t of over 120 GHz. IEEE Electron Device Lett 23 (2002) 455-457
7. Binari S.C., Klein P.B., and Kazior T.E. Trapping effects in GaN and SiC microwave FETs. Proc IEEE 90 6 (2002) 1048-1058
8. 3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs. IEEE Electron Device Lett 23 9 (2002) 505-507 2002
9. Tilak V et al. Effect of passivation on AlGaN/GaN HEMT device performance. In: Proceedings of the IEEE 27th international symposium on compound semiconductors; 2000. p. 357-63.
10. Tan W.S., Houston P.A., Parnrook P.J., Hill G., and Airey R.J. Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors. J Phys D, Appl Phys 35 7 (2002) 595-598
11. Liu Y., et al. Surface passivation of AlGaN/GaN HFETs using AlN layer deposited by reactive magnetron sputtering. Phys Status Solidi C 1 (2002) 69-73
12. 3-based surface passivation and insulated gate structure for AlGaN/GaN HFETs. Appl Phys Lett 83 14 (2003) 2254-2952
13. Gaffey B., Guido L.J., Wang X.W., and Ma T.P. High-quality oxide/nitride/oxide gate insulator for GaN MIS structures. IEEE Trans Electron Devices 48 3 (2001) 458-464
14. 4, and silicon oxynitride. Appl Phys Lett 84 4 (2004) 613-615
15. Desmaris V., Eriksson J., Rorsman N., and Zirath H. Low-resistance Si/Ti/Al/Ni/Au multilayer Ohmic contact to undoped AlGaN/GaN heterostructures. Electrochem Solid State Lett 7 4 (2004) G72-G74
16. Kikkawa T. Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion. IEDM Tech Dig; 2001. p. 25.4.1-4.
17. Zhang NQ. Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs. IEDM Tech Dig; 2001. p. 25.5.1-4.
18. Kordos P., et al. The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors. Semicond Sci Technol 21 (2006) 1592
19. Jeon Ch.M., et al. Effects of tensile stress in induced by silicon nitride passivation on electrical characteristics of AlGaN/GaN heterostructure field-effect transistors. Appl Phys Lett 86 (2005) 172101
20. Sze S.M. Physics of semiconductor devices (1983), John Wiley and Sons, Inc.
21. Bernat J., et al. Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs. Solid State Electron 47 (2003) 2097-2103