GaN-based FETs using Cat-CVD SiN passivation for millimeter-wave applications

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 548-552

  Higashiwaki, Masataka ^a   Mimura, Takashi ^a,b   Matsui, Toshiaki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Catalytic chemical vapor deposition (Cat CVD); GaN; Heterostructure field effect transistors (HFETs); Millimeter wave; SiN

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRON GAS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; MILLIMETER WAVES; SILICON NITRIDE;

CATALYTIC CHEMICAL VAPOR DEPOSITION (CAT-CVD); EXTRINSIC TRANSCONDUCTANCE; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFETS); OSCILLATION FREQUENCY;

CHEMICAL VAPOR DEPOSITION;

EID: 36749034230     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.090     Document Type: Article

References (16)

1. Ohno Y., and Kuzuhara M. IEEE Trans. Electron Devices 48 (2001) 517
2. Inoue T., Ando Y., Miyamoto H., Nakayama T., Okamoto Y., Hataya K., and Kuzuhara M. IEEE Trans. Microwave Theor. Tech. 53 (2005) 74
3. Moon J.S., Wu S., Wong D., Milosavljevic I., Conway A., Hashimoto P., Hu M., Antcliffe M., and Micovic M. IEEE Electron Device Lett. 26 (2005) 348
4. Palacios T., Chakraborty A., Heikman S., Keller S., DenBaars S.P., and Mishra U.K. IEEE Electron Device Lett. 27 (2006) 13
5. Awano Y., Kosugi M., Kosemura K., Mimura T., and Abe M. IEEE Trans. Electron Devices 36 (1989) 2260
6. Higashiwaki M., Hirose N., and Matsui T. IEEE Electron Device Lett. 26 (2005) 139
7. Higashiwaki M., Onojima N., Matsui T., and Mimura T. J. Appl. Phys. 100 (2006) 033714
8. Onojima N., Higashiwaki M., Suda J., Kimoto T., Mimura T., and Matsui T. J. Appl. Phys. 101 (2007) 043703
9. Ambacher O., Smart J., Shealy J.R., Weimann N.G., Chu K., Murphy M., Schaff W.J., Eastman L.F., Dimitrov R., Wittmer L., Stutzmann M., Rieger W., and Hilsenbeck J. J. Appl. Phys. 85 (1999) 3222
10. Binari S.C., Ikossi K., Roussos J.A., Kruppa W., Park D., Dietrich H.B., Koleske D.D., Wickenden A.E., and Henry R.L. IEEE Trans. Electron Devices 48 (2001) 465
11. Dang X.Z., Yu E.T., Piner E.J., and McDermott B.T. J. Appl. Phys. 90 (2001) 1357
12. Jeon C.M., and Lee J.-L. Appl. Phys. Lett. 86 (2005) 172101
13. Gregušova D., Bernát J., Držik M., Marso M., Novák J., Uherek F., and Kordoš P. Phys. Status Solidi, C 2 (2005) 2619
14. Shealy J.R., Prunty T.R., Chumbes E.M., and Ridley B.K. J. Cryst. Growth 250 (2003) 7
15. Wang W., Derluyn J., Germain M., Leys M., Degroote S., Schreurs D., and Borghs G. Jpn. J. Appl. Phys. 45 (2006) L224
16. Higashiwaki M., Mimura T., and Matsui T. Jpn. J. Appl. Phys. 45 (2006) L1111