Al2O3-based surface passivation and insulated gate structure for AlGaN/GaN HFETs

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2380-2384

  Hashizume, Tamotsu ^a   Ootomo, Shinya ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; CONDUCTION BAND OFFSET; GATE-LEAKAGE CURRENT; MAXIMUM TRANSCONDUCTANCE; MOLECULAR BEAM DEPOSITION; PASSIVATION STRUCTURE; SURFACE PASSIVATION; VACUUM ENVIRONMENT;

GALLIUM NITRIDE; PASSIVATION;

ALUMINUM;

EID: 84875097732     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303446     Document Type: Conference Paper

References (12)

1. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. M. Shealy, and L. F. Eastman, IEEE Electron Device Lett. 21, 268 (2000).
2. X. Hu, A. Koudymov, G. Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur, and R. Gaska, Appl. Phys. Lett. 79, 2832 (2001).
3. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Device 48, 560 (2001).
4. T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, and K. Maezawa, phys. stat. sol. (a) 194, 447 (2002).
5. T. Hashizume, S. Ootomo, T. Inagaki, and H. Hasegawa, J. Vac. Sci. Technol. B 21, 1828 (2003).
6. Z. Jin, T. Hashizume, and H. Hasegawa, Appl. Sur. Sci. 190, 361 (2002).
7. T. Hashizume, S. Ootomo, S. Oyama, M. Konishi, and H. Hasegawa, J. Vac. Sci. Technol. B 19, 1675 (2001).
8. S. Ootomo, T. Hashizume, and H. Hasegawa, phys. stat. sol. (c) 0, 90 (2002).
9. G. Martin, S. Strite, A. Botchkarev, A. Agarwal, A. Rockett, H. Morkoc, A. R. L. Lambrecht, and B. Segall, Appl. Phys. Lett. 65, 610 (1994).
10. K. Kunihiro, K. Kasahara, Y. Takahashi, and Y. Ohno, Jpn. J. Appl. Phys. 39, 2431 (2000).
11. A. Jimenez, D. Buttari, D. Jena, R. Coffie, S. Heikman, N. Q. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, and U. K. Mishra, IEEE Electron Device Lett. 23, 306 (2002).
12. H. Hasegawa, S. Ootomo, T. Inagaki, and T. Hashizume, J. Vac. Sci. Technol. B 21, 1844 (2003).