High frequency characterization and continuum modeling of ultrathin high-k (ZrO2) gate dielectrics on strained-Si

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 183-187

  Bera, M K ^a   Chakraborty, S ^a   Saha, S ^b   Paramanik, D ^c   Varma, S ^c   Bhattacharya, S ^d   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b VIDYASAGAR UNIVERSITY   (India)

^c INSTITUTE OF PHYSICS   (India)

^d QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

Continuum model; High k gate dielectric; PECVD; Strained Si

Indexed keywords

ELECTRON TRAPS; GATES (TRANSISTOR); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; ULTRATHIN FILMS; ZIRCONIUM COMPOUNDS;

CONTINUUM MODEL; HIGH-K GATE DIELECTRIC; STRAINED-SI;

DIELECTRIC DEVICES;

EID: 33644913105     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.083     Document Type: Conference Paper

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