The effect of silicon nitride stoichiometry on charging mechanisms in RF-MEMS capacitive switches

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 12, 2009, Pages 3518-3524

  Tavassolian, Negar ^a   Koutsoureli, M ^b   Papandreou, E ^b   Papaioannou, Giorgos ^a,b   Lacroix, Benjamin ^a   Liu, Z ^a   Papapolymerou, John ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF ATHENS   (Greece)

Author keywords

Dielectric materials; Metal semiconductor metal (MIM) capacitors; Reliability RF microelectromechanical (MEMS) switches; Stoichiometry; Stress

Indexed keywords

METAL SEMICONDUCTOR METAL; METAL-SEMICONDUCTOR-METAL (MIM) CAPACITORS; MICROELECTROMECHANICAL SWITCH;

ACTIVATION ENERGY; CAPACITANCE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC SWITCHES; MEMS; METALS; MICROELECTROMECHANICAL DEVICES; MIM DEVICES; PLASMA DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; STOICHIOMETRY;

DIELECTRIC MATERIALS;

EID: 73149125343     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2009.2033865     Document Type: Article

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