Effect of structure on radiative recombination processes in amorphous silicon suboxide prepared by rf sputtering

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 5936-5941

  Yoshida, Ken'Ichi ^a   Umezu, Ikurou ^a   Sakamoto, Naomichi ^b   Inada, Mitsuru ^a   Sugimura, Akira ^a  

^a KONAN UNIVERSITY   (Japan)

^b IWAKI MEISEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLUSTER REGIONS; CO-SPUTTERING METHOD; LOCALIZED STATE; MICROSCOPIC STRUCTURES; OXYGEN FRACTIONS; PEAK ENERGY; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; QUANTUM CONFINEMENT MODELS; RADIATIVE RECOMBINATION PROCESS; RF-SPUTTERING; TEMPERATURE DEPENDENCE; X RAY PHOTOEMISSION SPECTROSCOPY;

AMORPHOUS FILMS; FILM PREPARATION; PHOTOELECTRON SPECTROSCOPY; SILICON;

AMORPHOUS SILICON;

EID: 0037112963     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1512970     Document Type: Article

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