-
1
-
-
0037335575
-
The new indelible memories
-
Mar.
-
L. Geppert, "The new indelible memories," IEEE Spectr., vol. 40, no. 3, pp. 48-54, Mar. 2003.
-
(2003)
IEEE Spectr
, vol.40
, Issue.3
, pp. 48-54
-
-
Geppert, L.1
-
2
-
-
41149134446
-
A 90 nm phase change memory technology for stand-alone non-volatile memory applications
-
F. Pellizzer, A. Benvenuti, B. Gleixner, Y. Kim, B. Johnson, M. Magistretti, T. Marangon, A. Pirovano, R. Bez, and G. Atwood, "A 90 nm phase change memory technology for stand-alone non-volatile memory applications," in VLSI Symp. Tech. Dig., 2006, pp. 122-123.
-
(2006)
VLSI Symp. Tech. Dig.
, pp. 122-123
-
-
Pellizzer, F.1
Benvenuti, A.2
Gleixner, B.3
Kim, Y.4
Johnson, B.5
Magistretti, M.6
Marangon, T.7
Pirovano, A.8
Bez, R.9
Atwood, G.10
-
3
-
-
38749138084
-
Multi-bit storage in reset process of phase-change random access memory (PRAM)
-
Y. Zhang, J. Feng, Y. Zhang, Z. Zhang, Y. Lin, T. Tang, B. Cai, and B. Chen, "Multi-bit storage in reset process of phase-change random access memory (PRAM)," Phys. Stat. Sol.-Rapid Res. Lett., vol. 1, no. 1, pp. R28-R30, 2006.
-
(2006)
Phys. Stat. Sol.-Rapid Res. Lett.
, vol.1
, Issue.1
-
-
Zhang, Y.1
Feng, J.2
Zhang, Y.3
Zhang, Z.4
Lin, Y.5
Tang, T.6
Cai, B.7
Chen, B.8
-
4
-
-
33947590032
-
SET programming in phase change memories
-
Oct.
-
I. V. Karpov and S. A. Kostylev, "SET programming in phase change memories," IEEE Electron Device Lett., vol. 27, no. 10, pp. 808-810, Oct. 2006.
-
(2006)
IEEE Electron Device Lett.
, vol.27
, Issue.10
, pp. 808-810
-
-
Karpov, I.V.1
Kostylev, S.A.2
-
5
-
-
49549091783
-
A multi-level-cell bipolar-selected phase-change memory
-
Feb.
-
F. Bedeschi, R. Fackenthal, C. Resta, E. Donzetti, M. Jagasivamani, F. Pellizzer, D. Chow, D. Mills, A. Cabrini, G. Calvi, R. Faravelli, A. Fantini, R. Gastaldi, G. Torelli, and G. Casagrande, "A multi-level-cell bipolar-selected phase-change memory," in Proc. IEEE Int. Solid-State Circuit Conf. Dig. Tech. Papers, Feb. 2008, pp. 428-625.
-
(2008)
Proc. IEEE Int. Solid-State Circuit Conf. Dig. Tech. Papers
, pp. 428-625
-
-
Bedeschi, F.1
Fackenthal, R.2
Resta, C.3
Donzetti, E.4
Jagasivamani, M.5
Pellizzer, F.6
Chow, D.7
Mills, D.8
Cabrini, A.9
Calvi, G.10
Faravelli, R.11
Fantini, A.12
Gastaldi, R.13
Torelli, G.14
Casagrande, G.15
-
6
-
-
2442604559
-
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
-
May
-
A. Pirovano, A. Lacaita, F. Pellizzer, S. Kostylev, A. Benvenuti, and R. Bez, "Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials," IEEE Trans. Electron Devices, vol. 51, no. 5, pp. 714-719, May 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.5
, pp. 714-719
-
-
Pirovano, A.1
Lacaita, A.2
Pellizzer, F.3
Kostylev, S.4
Benvenuti, A.5
Bez, R.6
-
7
-
-
0742284414
-
Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices
-
Jan.
-
S. Senkader and C. D. Wright, "Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices," J. Appl. Phys., vol. 95, no. 2, pp. 504-511, Jan. 2004.
-
(2004)
J. Appl. Phys.
, vol.95
, Issue.2
, pp. 504-511
-
-
Senkader, S.1
Wright, C.D.2
-
8
-
-
77951659943
-
Data retention of partial-set states in phase change memories
-
Jan.
-
S. Braga, A. Cabrini, and G. Torelli, "Data retention of partial-set states in phase change memories," in Proc. 3rd Int. Nanoelectron. Conf., Jan. 2010, pp. 1287-1288.
-
(2010)
Proc. 3rd Int. Nanoelectron. Conf.
, pp. 1287-1288
-
-
Braga, S.1
Cabrini, A.2
Torelli, G.3
-
9
-
-
33847607700
-
Intrinsic data retention in nanoscaled phase-change memories-Part II: Statistical analysis and prediction of failure time
-
Dec.
-
A. Redaelli, D. Ielmini, U. Russo, and A. L. Lacaita, "Intrinsic data retention in nanoscaled phase-change memories-Part II: Statistical analysis and prediction of failure time," IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 3040-3046, Dec. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.12
, pp. 3040-3046
-
-
Redaelli, A.1
Ielmini, D.2
Russo, U.3
Lacaita, A.L.4
-
10
-
-
34548810303
-
A physics-based crystallization model for retention in phase-change memories
-
Apr. 15-19
-
U. Russo, D. Ielmini, and A. Lacaita, "A physics-based crystallization model for retention in phase-change memories," in Proc. IEEE Int. Reliab. Phys. Symp., Apr. 15-19, 2007, pp. 547-553.
-
(2007)
Proc. IEEE Int. Reliab. Phys. Symp.
, pp. 547-553
-
-
Russo, U.1
Ielmini, D.2
Lacaita, A.3
-
11
-
-
51949114502
-
Two-bit cell operation in diode-switch phase change memory cells with 90 nm technology
-
D.-H. Kang, J.-H. Lee, J. Kong, D. Ha, J. Yu, C. Um, J. Park, F. Yeung, J. Kim, W. Park, Y. Jeon, M. Lee, J. Park, Y. Song, J. Oh, G. Jeong, and H. Jeong, "Two-bit cell operation in diode-switch phase change memory cells with 90 nm technology," in VLSI Symp. Tech. Dig., 2008, pp. 98-99.
-
(2008)
VLSI Symp. Tech. Dig.
, pp. 98-99
-
-
Kang, D.-H.1
Lee, J.-H.2
Kong, J.3
Ha, D.4
Yu, J.5
Um, C.6
Park, J.7
Yeung, F.8
Kim, J.9
Park, W.10
Jeon, Y.11
Lee, M.12
Park, J.13
Song, Y.14
Oh, J.15
Jeong, G.16
Jeong, H.17
-
12
-
-
77950083056
-
Incomplete filament crystallization during set operation in PCM cells
-
Apr.
-
D. Mantegazza, D. Ielmini, A. Pirovano, and A. Lacaita, "Incomplete filament crystallization during set operation in PCM cells," IEEE Electron Device Lett., vol. 31, no. 4, pp. 341-343, Apr. 2010.
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.4
, pp. 341-343
-
-
Mantegazza, D.1
Ielmini, D.2
Pirovano, A.3
Lacaita, A.4
-
13
-
-
22544464192
-
4-Mb MOSFET-selected ìtrench phase-change memory experimental chip
-
Jul.
-
F. Bedeschi, R. Bez, C. Boffino, E. Bonizzoni, E. C. Buda, G. Casagrande, L. Costa, M. Ferraro, R. Gastaldi, O. Khouri, F. Ottogalli, F. Pellizzer, A. Pirovano, C. Resta, G. Torelli, and M. Tosi, "4-Mb MOSFET-selected ìtrench phase-change memory experimental chip," IEEE J. Solid State Circuits, vol. 40, no. 7, pp. 1557-1565, Jul. 2005.
-
(2005)
IEEE J. Solid State Circuits
, vol.40
, Issue.7
, pp. 1557-1565
-
-
Bedeschi, F.1
Bez, R.2
Boffino, C.3
Bonizzoni, E.4
Buda, E.C.5
Casagrande, G.6
Costa, L.7
Ferraro, M.8
Gastaldi, R.9
Khouri, O.10
Ottogalli, F.11
Pellizzer, F.12
Pirovano, A.13
Resta, C.14
Torelli, G.15
Tosi, M.16
-
14
-
-
22544488032
-
Bit-line biasing technique for phase-change memories
-
F. Bedeschi, C. Boffino, E. Bonizzoni, O. Khouri, C. Resta, and G. Torelli, "Bit-line biasing technique for phase-change memories," in Proc. ICSES, 2004, pp. 229-232.
-
(2004)
Proc. ICSES
, pp. 229-232
-
-
Bedeschi, F.1
Boffino, C.2
Bonizzoni, E.3
Khouri, O.4
Resta, C.5
Torelli, G.6
-
15
-
-
34547373844
-
Set-sweep programming pulse for phase-change memories
-
F. Bedeschi, C. Boffino, E. Bonizzoni, C. Resta, G. Torelli, and D. Zella, "Set-sweep programming pulse for phase-change memories," in Proc. IEEE Int. Symp. Circuits Syst., 2006, pp. 967-970.
-
(2006)
Proc. IEEE Int. Symp. Circuits Syst.
, pp. 967-970
-
-
Bedeschi, F.1
Boffino, C.2
Bonizzoni, E.3
Resta, C.4
Torelli, G.5
Zella, D.6
-
16
-
-
49549091783
-
A multilevel- cell bipolar-selected phase-change memory
-
Feb.
-
F. Bedeschi, R. Fackenthal, C. Resta, E. Donze, M. Jagasivamani, E. Buda, F. Pellizzer, D. Chow, A. Cabrini, G. Calvi, R. Faravelli, A. Fantini, G. Torelli, D. Mills, R. Gastaldi, and G. Casagrande, "A multilevel- cell bipolar-selected phase-change memory," in Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2008, pp. 428-625.
-
(2008)
Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers
, pp. 428-625
-
-
Bedeschi, F.1
Fackenthal, R.2
Resta, C.3
Donze, E.4
Jagasivamani, M.5
Buda, E.6
Pellizzer, F.7
Chow, D.8
Cabrini, A.9
Calvi, G.10
Faravelli, R.11
Fantini, A.12
Torelli, G.13
Mills, D.14
Gastaldi, R.15
Casagrande, G.16
-
17
-
-
62149120875
-
Dependence of resistance drift on the amorphous cap size in phase change memory arrays
-
Mar.
-
S. Braga, A. Cabrini, and G. Torelli, "Dependence of resistance drift on the amorphous cap size in phase change memory arrays," Appl. Phys. Lett., vol. 94, no. 9, p. 092 112, Mar. 2009.
-
(2009)
Appl. Phys. Lett.
, vol.94
, Issue.9
, pp. 092112
-
-
Braga, S.1
Cabrini, A.2
Torelli, G.3
-
18
-
-
79151482622
-
Structural relaxation in chalcogenide-based phase change memories (PCMs): From defect-annihilation kinetic to device-reliability prediction
-
S. Lavizzari, D. Ielmini, D. Sharma, and A. L. Lacaita, "Structural relaxation in chalcogenide-based phase change memories (PCMs): From defect-annihilation kinetic to device-reliability prediction," in Proc. Eur. Phase Change Ovonics Symp., 2008.
-
(2008)
Proc. Eur. Phase Change Ovonics Symp.
-
-
Lavizzari, S.1
Ielmini, D.2
Sharma, D.3
Lacaita, A.L.4
-
19
-
-
51549099818
-
Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells
-
May
-
D. Ielmini, D. Sharma, S. Lavizzari, and A. Lacaita, "Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells," in Proc. IEEE Int. Reliab. Phys. Symp., May 2008, pp. 597-603.
-
(2008)
Proc. IEEE Int. Reliab. Phys. Symp.
, pp. 597-603
-
-
Ielmini, D.1
Sharma, D.2
Lavizzari, S.3
Lacaita, A.4
-
20
-
-
21644477080
-
Electrothermal and phase-change dynamics in chalcogenide-based memories
-
Dec. 13-15
-
A. L. Lacaita, A. Redaelli, D. Ielmini, F. Pellizzer, A. Pirovano, A. Benvenuti, and R. Bez, "Electrothermal and phase-change dynamics in chalcogenide-based memories," in IEDM Tech. Dig., Dec. 13-15, 2004, pp. 911-914.
-
(2004)
IEDM Tech. Dig.
, pp. 911-914
-
-
Lacaita, A.L.1
Redaelli, A.2
Ielmini, D.3
Pellizzer, F.4
Pirovano, A.5
Benvenuti, A.6
Bez, R.7
-
21
-
-
27744575915
-
Parasitic reset in the programming transient of PCMs
-
Nov.
-
D. Ielmini, D. Mantegazza, A. Lacaita, A. Pirovano, and F. Pellizzer, "Parasitic reset in the programming transient of PCMs," IEEE Electron Device Lett., vol. 26, no. 11, pp. 799-801, Nov. 2005.
-
(2005)
IEEE Electron Device Lett.
, vol.26
, Issue.11
, pp. 799-801
-
-
Ielmini, D.1
Mantegazza, D.2
Lacaita, A.3
Pirovano, A.4
Pellizzer, F.5
-
22
-
-
45149123944
-
Threshold switching and phase transition numerical models for phase change memory simulations
-
Jun.
-
A. Redaelli, A. Pirovano, A. Benvenuti, and A. L. Lacaita, "Threshold switching and phase transition numerical models for phase change memory simulations," J. Appl. Phys., vol. 103, no. 11, p. 111 101, Jun. 2008.
-
(2008)
J. Appl. Phys.
, vol.103
, Issue.11
, pp. 111101
-
-
Redaelli, A.1
Pirovano, A.2
Benvenuti, A.3
Lacaita, A.L.4
-
23
-
-
77649184676
-
A new analytical model of the erasing operation in phase-change memories
-
Mar.
-
A. Chimenton, C. Zambelli, and P. Olivo, "A new analytical model of the erasing operation in phase-change memories," IEEE Electron Device Lett., vol. 31, no. 3, pp. 198-200, Mar. 2010.
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.3
, pp. 198-200
-
-
Chimenton, A.1
Zambelli, C.2
Olivo, P.3
-
24
-
-
77952332083
-
Distributed- Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices
-
D. Fugazza, D. Ielmini, S. Lavizzari, and A. L. Lacaita, "Distributed- Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices," in IEDM Tech. Dig., 2009, pp. 1-4.
-
(2009)
IEDM Tech. Dig.
, pp. 1-4
-
-
Fugazza, D.1
Ielmini, D.2
Lavizzari, S.3
Lacaita, A.L.4
-
25
-
-
72349096382
-
Voltage-driven multilevel programming in phase change memories
-
A. Cabrini, S. Braga, A. Manetto, and G. Torelli, "Voltage-driven multilevel programming in phase change memories," in Proc. Int. Workshop Memory Technol., Des., Test., 2009, pp. 3-6.
-
(2009)
Proc. Int. Workshop Memory Technol., Des., Test.
, pp. 3-6
-
-
Cabrini, A.1
Braga, S.2
Manetto, A.3
Torelli, G.4
|