-
1
-
-
33751334352
-
Current status of chalcogenide phase change memory
-
Apr
-
G. Atwood and R. Bez, "Current status of chalcogenide phase change memory," in Device Research Conf. Dig., Apr. 2005, pp. 29-33.
-
(2005)
Device Research Conf. Dig
, pp. 29-33
-
-
Atwood, G.1
Bez, R.2
-
2
-
-
35148862022
-
Analytical modeling of chalco-genide crystallization for PCM data-retention extrapolation
-
Oct
-
U. Russo, D. Ielmini, and A. L. Lacaita, "Analytical modeling of chalco-genide crystallization for PCM data-retention extrapolation," IEEE Trans. Electron Devices, vol. 54, no. 10, pp. 2769-2777, Oct. 2007.
-
(2007)
IEEE Trans. Electron Devices
, vol.54
, Issue.10
, pp. 2769-2777
-
-
Russo, U.1
Ielmini, D.2
Lacaita, A.L.3
-
3
-
-
20244387716
-
-
Sept
-
F. Bedeschi, R. Bez, C. Boffino, E. Bonizzoni, E. Buda, G. Casagrande, L. Costa, M. Ferraro, R. Gastaldi, O. Khouri, F. Ottogalli, F. Pellizzer, A. Pirovano, C. Resta, G. Torelli, and M. Tosi, "4-Mb MOSFET-selected phase-change memory experimental chip," Sept. 2004, pp. 207-210.
-
(2004)
4-Mb MOSFET-selected phase-change memory experimental chip
, pp. 207-210
-
-
Bedeschi, F.1
Bez, R.2
Boffino, C.3
Bonizzoni, E.4
Buda, E.5
Casagrande, G.6
Costa, L.7
Ferraro, M.8
Gastaldi, R.9
Khouri, O.10
Ottogalli, F.11
Pellizzer, F.12
Pirovano, A.13
Resta, C.14
Torelli, G.15
Tosi, M.16
-
4
-
-
22544488032
-
Bit-line biasing technique for phase-change memories
-
F. Bedeschi et al., "Bit-line biasing technique for phase-change memories," Proc. of ICSES, pp. 229-232, 2004.
-
(2004)
Proc. of ICSES
, pp. 229-232
-
-
Bedeschi, F.1
-
6
-
-
1642327470
-
Electronic switching in phase-change memories
-
March
-
A. Pirovano et al., "Electronic switching in phase-change memories," IEEE Electron Device Lett., vol. 51, no. 3, pp. 452-459, March 2004.
-
(2004)
IEEE Electron Device Lett
, vol.51
, Issue.3
, pp. 452-459
-
-
Pirovano, A.1
-
7
-
-
5044241527
-
Electronic switching effect and phase-change transition in chalcogenide materials
-
Oct
-
A. Redaelli et al., "Electronic switching effect and phase-change transition in chalcogenide materials," IEEE Electron Device Lett., vol. 25, no. 10, pp. 684-686, Oct. 2004.
-
(2004)
IEEE Electron Device Lett
, vol.25
, Issue.10
, pp. 684-686
-
-
Redaelli, A.1
-
8
-
-
21644477080
-
Electrothermal and phase-change dynamics in chalcogenide-based memories, IEEE Int. Electron Devices Meeting, 2004
-
13-15 Dec
-
A. L. Lacaita et al., "Electrothermal and phase-change dynamics in chalcogenide-based memories," IEEE Int. Electron Devices Meeting, 2004. IEDM Technical Digest., pp. 911-914, 13-15 Dec. 2004.
-
(2004)
IEDM Technical Digest
, pp. 911-914
-
-
Lacaita, A.L.1
-
9
-
-
0342869049
-
Kinetics of phase change I. general theory
-
Dec
-
M. Avrami, "Kinetics of phase change I. general theory," J. of Chem. Phys., vol. 7, no. 7, pp. 1103-1112, Dec. 1939.
-
(1939)
J. of Chem. Phys
, vol.7
, Issue.7
, pp. 1103-1112
-
-
Avrami, M.1
-
10
-
-
0020844527
-
An improved method for programming a worderasable EEPROM
-
Nov./Dec
-
G. Torelli and P. Lupi, "An improved method for programming a worderasable EEPROM," Alta Frequenza, vol. LII, no. 6, pp. 487-494, Nov./Dec. 1983.
-
(1983)
Alta Frequenza
, vol.52
, Issue.6
, pp. 487-494
-
-
Torelli, G.1
Lupi, P.2
-
11
-
-
0024752312
-
A 90-ns one-million erase/program cycle 1-mbit flash memory
-
Oct
-
V. N. Kynett et al., "A 90-ns one-million erase/program cycle 1-mbit flash memory," IEEE J. Solid-State Circuits, vol. 24, pp. 1259-1264, Oct. 1989.
-
(1989)
IEEE J. Solid-State Circuits
, vol.24
, pp. 1259-1264
-
-
Kynett, V.N.1
-
12
-
-
49549091783
-
A multi-level cell bipolar-selected phase change memory
-
Sept
-
F. Bedeschi et al., "A multi-level cell bipolar-selected phase change memory," in Proc. of Int. Solid-State Circ. Conf. (ISSCC 2008), Sept. 2008, pp. 207-210.
-
(2008)
Proc. of Int. Solid-State Circ. Conf. (ISSCC 2008)
, pp. 207-210
-
-
Bedeschi, F.1
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