메뉴 건너뛰기




Volumn , Issue , 2009, Pages 3-6

Voltage-driven multilevel programming in phase change memories

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; ELECTRICAL RESISTANCES; IN-PHASE; MEMORY ARRAY; MULTI-LEVEL; MULTILEVEL PROGRAMMING; MULTIPULSES; PROGRAMMING ALGORITHMS; SINGLE CELLS; SINGLE-PULSE; TIME LENGTH;

EID: 72349096382     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MTDT.2009.11     Document Type: Conference Paper
Times cited : (32)

References (12)
  • 1
    • 33751334352 scopus 로고    scopus 로고
    • Current status of chalcogenide phase change memory
    • Apr
    • G. Atwood and R. Bez, "Current status of chalcogenide phase change memory," in Device Research Conf. Dig., Apr. 2005, pp. 29-33.
    • (2005) Device Research Conf. Dig , pp. 29-33
    • Atwood, G.1    Bez, R.2
  • 2
    • 35148862022 scopus 로고    scopus 로고
    • Analytical modeling of chalco-genide crystallization for PCM data-retention extrapolation
    • Oct
    • U. Russo, D. Ielmini, and A. L. Lacaita, "Analytical modeling of chalco-genide crystallization for PCM data-retention extrapolation," IEEE Trans. Electron Devices, vol. 54, no. 10, pp. 2769-2777, Oct. 2007.
    • (2007) IEEE Trans. Electron Devices , vol.54 , Issue.10 , pp. 2769-2777
    • Russo, U.1    Ielmini, D.2    Lacaita, A.L.3
  • 4
    • 22544488032 scopus 로고    scopus 로고
    • Bit-line biasing technique for phase-change memories
    • F. Bedeschi et al., "Bit-line biasing technique for phase-change memories," Proc. of ICSES, pp. 229-232, 2004.
    • (2004) Proc. of ICSES , pp. 229-232
    • Bedeschi, F.1
  • 6
    • 1642327470 scopus 로고    scopus 로고
    • Electronic switching in phase-change memories
    • March
    • A. Pirovano et al., "Electronic switching in phase-change memories," IEEE Electron Device Lett., vol. 51, no. 3, pp. 452-459, March 2004.
    • (2004) IEEE Electron Device Lett , vol.51 , Issue.3 , pp. 452-459
    • Pirovano, A.1
  • 7
    • 5044241527 scopus 로고    scopus 로고
    • Electronic switching effect and phase-change transition in chalcogenide materials
    • Oct
    • A. Redaelli et al., "Electronic switching effect and phase-change transition in chalcogenide materials," IEEE Electron Device Lett., vol. 25, no. 10, pp. 684-686, Oct. 2004.
    • (2004) IEEE Electron Device Lett , vol.25 , Issue.10 , pp. 684-686
    • Redaelli, A.1
  • 8
    • 21644477080 scopus 로고    scopus 로고
    • Electrothermal and phase-change dynamics in chalcogenide-based memories, IEEE Int. Electron Devices Meeting, 2004
    • 13-15 Dec
    • A. L. Lacaita et al., "Electrothermal and phase-change dynamics in chalcogenide-based memories," IEEE Int. Electron Devices Meeting, 2004. IEDM Technical Digest., pp. 911-914, 13-15 Dec. 2004.
    • (2004) IEDM Technical Digest , pp. 911-914
    • Lacaita, A.L.1
  • 9
    • 0342869049 scopus 로고
    • Kinetics of phase change I. general theory
    • Dec
    • M. Avrami, "Kinetics of phase change I. general theory," J. of Chem. Phys., vol. 7, no. 7, pp. 1103-1112, Dec. 1939.
    • (1939) J. of Chem. Phys , vol.7 , Issue.7 , pp. 1103-1112
    • Avrami, M.1
  • 10
    • 0020844527 scopus 로고
    • An improved method for programming a worderasable EEPROM
    • Nov./Dec
    • G. Torelli and P. Lupi, "An improved method for programming a worderasable EEPROM," Alta Frequenza, vol. LII, no. 6, pp. 487-494, Nov./Dec. 1983.
    • (1983) Alta Frequenza , vol.52 , Issue.6 , pp. 487-494
    • Torelli, G.1    Lupi, P.2
  • 11
    • 0024752312 scopus 로고
    • A 90-ns one-million erase/program cycle 1-mbit flash memory
    • Oct
    • V. N. Kynett et al., "A 90-ns one-million erase/program cycle 1-mbit flash memory," IEEE J. Solid-State Circuits, vol. 24, pp. 1259-1264, Oct. 1989.
    • (1989) IEEE J. Solid-State Circuits , vol.24 , pp. 1259-1264
    • Kynett, V.N.1
  • 12
    • 49549091783 scopus 로고    scopus 로고
    • A multi-level cell bipolar-selected phase change memory
    • Sept
    • F. Bedeschi et al., "A multi-level cell bipolar-selected phase change memory," in Proc. of Int. Solid-State Circ. Conf. (ISSCC 2008), Sept. 2008, pp. 207-210.
    • (2008) Proc. of Int. Solid-State Circ. Conf. (ISSCC 2008) , pp. 207-210
    • Bedeschi, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.