Multi-bit storage in reset process of phase-change Random Access Memory (PRAM)

Physica Status Solidi - Rapid Research Letters

Volumn 1, Issue 1, 2007, Pages

  Zhang, Yi ^a   Feng, Jie ^a   Zhang, Yin ^a   Zhang, Zufa ^a   Lin, Yinyin ^b   Tang, Ting'ao ^b   Cai, Bingchu ^a   Chen, Bomy ^c  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b FUDAN UNIVERSITY   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; PHASE CHANGE MATERIALS; POLYCRYSTALLINE MATERIALS; TEMPERATURE;

AMORPHOUS STATE LAYER; PHASE-CHANGE RANDOM ACCESS MEMORY (PRAM); THERMAL SIMULATION;

RANDOM ACCESS STORAGE;

EID: 38749138084     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200600020     Document Type: Article

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