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Volumn , Issue , 2009, Pages 112-113
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Impact of uniaxial strain on channel backscattering characteristics and drain current variation for nanoscale PMOSFETs
a
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Author keywords
[No Author keywords available]
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Indexed keywords
BALLISTIC EFFICIENCY;
CHANNEL BACKSCATTERING;
CHANNEL BACKSCATTERING CHARACTERISTICS;
CHANNEL JUNCTIONS;
COMPRESSIVE STRAIN;
DRAIN VOLTAGE;
ELECTROSTATIC POTENTIALS;
GATE LENGTH;
GATE VOLTAGES;
NANO SCALE;
P-MOSFETS;
TEMPERATURE DEPENDENT;
UNI-AXIAL STRAINS;
BACKSCATTERING;
MOSFET DEVICES;
NANOSTRUCTURED MATERIALS;
DRAIN CURRENT;
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EID: 70350050088
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (15)
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References (12)
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