Physical understanding of fundamental properties of Si (110) pMOSFETs - Inversion-layer capacitance, mobility universality, and uniaxial stress effects

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 711-714

  Saitoh, Masumi ^a   Kobayashi, Shigeki ^a   Uchida, Ken ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CONCENTRATION (PROCESS); MOLECULAR BEAM EPITAXY; MOSFET DEVICES; SILICON; TRANSPORT PROPERTIES;

EFFECTIVE MASSES; FUNDAMENTAL PROPERTIES; IMPURITY CONCENTRATIONS; LAYER CAPACITANCE; LAYER THICKNESSES; MOBILITY UNIVERSALITY; P-MOSFETS; SI(110); UNIAXIAL STRESSES;

ELECTRON DEVICES;

EID: 50249183460     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419045     Document Type: Conference Paper

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