New solution to high-field transport in semiconductors: Ii. velocity saturation and ballistic transmission

Japanese Journal of Applied Physics

Volumn 48, Issue 3, 2009, Pages 034504-

  Natori, Kenji ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER ENERGY RELAXATION; FLUX EQUATIONS; HIGH FIELD TRANSPORT; HIGH-FIELD; NANOSCALE DEVICE; NEW SOLUTIONS; OHM'S LAW; OPTICAL PHONON EMISSION; PERTURBATION EXPANSIONS; RELAXATION TIME APPROXIMATION; ROOM TEMPERATURE; TRANSMISSION COEFFICIENTS; VELOCITY SATURATION; VELOCITY-FIELD CHARACTERISTICS;

BALLISTICS; BOLTZMANN EQUATION; ELECTRIC COILS; ELECTRIC FIELDS; EXPLOSIVES; PHONONS;

SEMICONDUCTOR DIODES;

EID: 67650786790     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.034504     Document Type: Article

References (29)

1. E. J. Ryder: Phys. Rev. 90 (1953) 766.
2. W. Shockley: Bell Syst. Tech. J. 30 (1951) 990.
3. F. J. Blatt: in Solid State Physics, ed. F. Seitz and D. Turnbull (Academic, New York, 1957) Vol. 4.
4. J. M. Ziman: Principles of the Theory of Solids (Cambridge University Press, Cambridge, U. K., 1972) 2nd ed.
5. W. Shockley: Electrons and Holes in Semiconductors (Van Nostrand, Princeton, NJ, 1950).
6. N. W. Ashcroft and N. D. Mermin: Solid State Physics (Saunders College, Philadelphia, PA, 1976).
7. K. Seeger: Semiconductor Physics (Springer, Berlin, 1989).
8. E. M. Conwell: in High Field Transport in Semiconductors, ed. F. Seitz, D. Turnbull, and H. Ehrenreich (Academic, New York, 1967).
9. H. G. Reik and H. Risken: Phys. Rev. 126 (1962) 1737.
10. P. M. Smith, M. Inoue, and J. Frei: Appl. Phys. Lett. 37 (1980) 797.
11. K. Natori: Jpn. J. Appl. Phys. 48 (2009) 034503.
12. K. Natori and T. Shimizu: Ext. Abstr. Solid State Devices and Materials, 2006, p. 348.
13. K. Natori: Phys. Status Solidi C 5 (2008) 111.
14. For example, M. Levinshtein, S. Runyanstev, and M. Shur: Handbook Series on Semiconductor Parameters (World Scientific, Singapore, 1996) Vol. 1, p. 1.
15. C. Jacoboni and L. Reggiani: Rev. Mod. Phys. 55 (1983) 645.
16. G. A. Baraff: Phys. Rev. 128 (1962) 2507.
17. M. Lundstrom: IEEE Electron Device Lett. 18 (1997) 361.
18. K. Natori: IEICE Trans. Electron. E84-C (2001) 1029.
19. K. Natori: Appl. Surf. Sci. 254 (2008) 6194.
20. S. Datta, F. Assad, and M. S. Lundstrom: Superlattices Microstruct. 23 (1998) 771.
21. F. Berz: Solid-State Electron. 28 (1985) 1007.
22. M. Lundstrom and Z. Ren: IEEE Trans. Electron Devices 49 (2002) 133.
23. R. Clerc, P. Palestri, and L. Selmi: IEEE Trans. Electron Devices 53 (2006) 1634.
24. C. Canali, C. Jacoboni, F. Nava, G. Ottaviani, and A. Quaranta: Phys. Rev. B 12 (1975) 2265.
25. C. Canali, G. Ottaviani, and A. A. Quaranta: J. Phys. Chem. Solids 32 (1971) 1707.
26. Y. Taur and T. H. Ning: Fundamentals of Modern VLSI Devices (Cambridge University Press, Cambridge, U. K., 1998).
27. D. Pines and D. Bohm: Phys. Rev. 85 (1952) 338.
28. M. V. Fischetti: Phys. Rev. B 44 (1991) 5527.
29. P. A. Childs and C. C. C. Leung: Electron. Lett. 31 (1995) 139.