Comparative study between Si (110) and (100) substrates on mobility and velocity enhancements for short-channel highly-strained PFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 14-15

  Mayuzumi, S ^a,b   Yamakawa, S ^a   Kosemura, D ^b   Takei, M ^b   Nagata, K ^b   Akamatsu, H ^b   Aamari, K ^a   Tateshita, Y ^a   Wakabayashi, H ^a   Tsukamoto, M ^a   Ohno, T ^a   Saitoh, M ^a   Ogura, A ^b   Nagashima, N ^a  

^a SONY CORPORATION   (Japan)

^b MEIJI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; DAMASCENE GATE; EFFECTIVE GATE LENGTH; GATE LENGTH; SATURATION CURRENT; SATURATION VELOCITY; SI(110); UV-RAMAN SPECTROSCOPY; VELOCITY ENHANCEMENT;

RAMAN SPECTROSCOPY; SUBSTRATES; VELOCITY;

HOLE MOBILITY;

EID: 71049158793     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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