Uniaxial stress engineering for high-performance Ge NMOSFETs

IEEE Transactions on Electron Devices

Volumn 57, Issue 5, 2010, Pages 1037-1046

  Kobayashi, Masaharu ^a   Irisawa, Toshifumi ^a   Magyari Köpe, Blanka ^a   Saraswat, Krishna ^a   Wong, H S Philip ^a   Nishi, Yoshio ^a  

^a Stanford University   (United States)

Author keywords

Ballistic transport; Ge negative channel metal oxide semiconductor field effect transistor (NMOSFET); Mobility enhancement; Uniaxial stress

Indexed keywords

BALLISTIC TRANSPORTS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY ENHANCEMENT; NMOSFET; UNIAXIAL STRESS;

BALLISTICS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; STRESSES; TRANSPORT PROPERTIES;

MOSFET DEVICES;

EID: 77951621871     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2042767     Document Type: Article

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