Submicron InP/InGaAs composite-channel metal-oxide-semiconductor field-effect transistor with selectively regrown n+-source

Applied Physics Express

Volumn 3, Issue 9, 2010, Pages

  Kanazawa, Toru ^a   Wakabayashi, Kazuya ^a   Saito, Hisashi ^a   Terao, Ryousuke ^a   Ikeda, Shunsuke ^a   Miyamoto, Yasuyuki ^a   Furuya, Kazuhito ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; COMPOSITE CHANNEL; DRAIN VOLTAGE; DUMMY GATES; GATE STACKS; GATE VOLTAGES; INP/INGAAS; MAXIMUM DRAIN CURRENT; MAXIMUM TRANSCONDUCTANCE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METALORGANIC VAPOR PHASE EPITAXY; SUBMICRON;

DIELECTRIC DEVICES; DRAIN CURRENT; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; ORGANOMETALLICS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 77956715333     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.094201     Document Type: Article

References (11)

1. ITRS 2009 PIDS (2009).
2. D.-H. Kim and J. A. del Alamo: IEEE Trans. Electron Devices 55 (2008) 2546.
3. R. J. W. Hill, D. A. J. Moran, X. Li, H. Ahou, D. Macintyre, S. Thoms, A. Asenov, P. Zurcher, K. Rajagopalan, J. Abrokwah, R. Droopad, M. Passlack, and I. G. Thayne: IEEE Electron Device Lett. 28 (2007) 1080.
4. Y. Xuan, Y. Q. Wu, and P. D. Ye: IEEE Electron Device Lett. 29 (2008) 294.
5. T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, M. Hong, J. Kwo, W. Tsai, and Y. C. Wang: Appl. Phys. Lett. 93 (2008) 033516.
6. M. Yokoyama, T. Yasuda, H. Takagi, N. Miyata, Y. Urabe, H. Ishii, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi: Appl. Phys. Lett. 96 (2010) 142106.
7. M. V. Fischetti, L. Wang, B. Yu, C. Sachs, P. M. Asbeck, Y. Taur, and M. Rodwell: IEDM Tech. Dig., 2007, p. 109.
8. H. Tsuchiya, A. Maenaka, T. Mori, and Y. Azuma: IEEE Electron Device Lett. 31 (2010) 365.
9. M. Rodwell, E. Lind, Z. Griffith, S. R. Bank, A. M. Crook, U. Singisetti, M. Wistey, G. Burek, and A. C. Gossard: Int. Conf. Indium Phosphide and Related Materials, 2007, p. 9.
10. U. Singisetti, M. A. Wistey, G. J. Burek, A. K. Baraskar, B. J. Thibeault, A. C. Gossard, M. J. W. Rodwell, B. Shin, E. J. Kim, P. C. McIntyre, B. Yu, Y. Yuan, D. Wang, Y. Taur, P. Asbeck, and Y.-J. Lee: IEEE Electron Device Lett. 30 (2009) 1128.
11. T. Kanazawa, H. Saito, K. Wakabayashi, T. Tajima, R. Terao, Y. Miyamoto, and K. Furuya: Ext. Abstr. Solid State Devices and Materials, 2009, p. 246