Electronically activated boron-oxygen-related recombination centers in crystalline silicon

Journal of Applied Physics

Volumn 99, Issue 1, 2006, Pages

  Bothe, Karsten ^a   Schmidt, Jan ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNIHILATION KINETICS; INTERSTITIAL OXYGEN; OPEN-CIRCUIT VOLTAGE MEASUREMENTS; RECOMBINATION CENTERS;

ACTIVATION ANALYSIS; BORON COMPOUNDS; CRYSTALLINE MATERIALS; ELECTRON IRRADIATION; MICROSCOPIC EXAMINATION; SOLAR CELLS; TEMPERATURE MEASUREMENT;

SILICON;

EID: 30844465492     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2140584     Document Type: Article

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