Light-induced boron-oxygen defect generation in compensated p -type Czochralski silicon

Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

  MacDonald, D ^a   Rougieux, F ^a   Cuevas, A ^a   Lim, B ^b   Schmidt, J ^b   Di Sabatino, M ^c   Geerligs, L J ^d  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^c SINTEF MATERIALS AND CHEMISTRY   (Norway)

^d TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BEFORE AND AFTER; BORON CONCENTRATIONS; BORON-OXYGEN DEFECTS; CARRIER LIFETIME MEASUREMENTS; CONCENTRATION OF; CZOCHRALSKI SILICON; OXYGEN DIMERS; P-TYPE; PHOTOCONDUCTANCE; SOLAR CELL PERFORMANCE;

BORON; BORON COMPOUNDS; CARRIER LIFETIME; CARRIER MOBILITY; DEFECTS; OLIGOMERS; OXYGEN; PHOSPHORUS;

CARRIER CONCENTRATION;

EID: 67249100301     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3121208     Document Type: Article

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