Dynamic photoluminescence lifetime imaging for the characterisation of silicon wafers

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 1, 2011, Pages 25-27

  Herlufsen, Sandra ^a   Ramspeck, Klaus ^a,b   Hinken, David ^a   Schmidt, Arne ^a   Müller, Jens ^a   Bothe, Karsten ^a   Schmidt, Jan ^a   Brendel, Rolf ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b SCHOTT Solar AG   (Germany)

Author keywords

Imaging; Lifetime; Photoluminescence; Si; Wafers

Indexed keywords

CHARACTERISATION; CRYSTALLINE SILICON WAFERS; IMAGING; INGAAS CAMERA; INTEGRATION TIME; LIFETIME; LUMINESCENCE EMISSION; MODULATED EXCITATIONS; MULTICRYSTALLINE SILICON WAFERS; OPTICAL EXCITATIONS; PHOTOLUMINESCENCE LIFETIME; PHOTOLUMINESCENCE MEASUREMENTS; PL IMAGE; SI; TIME DEPENDENT; WAFERS;

CAMERAS; CARRIER LIFETIME; IMAGING TECHNIQUES; PHOTOEXCITATION; PHOTOLUMINESCENCE; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 78650979276     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004426     Document Type: Article

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