Determination of local minority carrier diffusion lengths in crystalline silicon from luminescence images

Journal of Applied Physics

Volumn 106, Issue 1, 2009, Pages

  Giesecke, J A ^a   Kasemann, M ^b   Warta, W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DIFFUSION LENGTH; CHARGE CARRIER DENSITY; CRYSTALLINE SILICONS; DIFFUSION LENGTH; ELECTROLUMINESCENCE INTENSITY; INHOMOGENEITIES; KEY FEATURE; MEASURING TECHNIQUE; MINORITY CARRIER DIFFUSION LENGTH; PL IMAGE; PL INTENSITY; QUANTITATIVE INFORMATION; SHORT-PASS FILTER; SPATIALLY RESOLVED; STRAIGHT-FORWARD METHOD; TEMPERATURE DEPENDENCE;

CELL MEMBRANES; DIFFUSION; IMAGE PROCESSING; LIGHT; LUMINESCENCE; OPTICAL FILTERS; PHOTOVOLTAIC CELLS; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS;

SILICON WAFERS;

EID: 67650730027     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3157200     Document Type: Article

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