Lifetime mapping of si wafers by an infrared camera

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 99-103

  Bail, Michael ^a   Kentsch, Jörg ^b   Brendel, Rolf ^a   Schulz, Max ^a,b  

^a BAVARIAN CENTER FOR APPLIED ENERGY RESEARCH ZAE BAYERN   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAMERAS; INFRARED DEVICES; MAPPING; SILICON WAFERS; TEMPERATURE INDICATING CAMERAS;

HIGH SPATIAL RESOLUTION; IN-LINE PROCESS CONTROL; INFRA-RED CAMERAS; INFRARED MEASUREMENTS; MINORITY CARRIER; MINORITY CARRIER LIFETIMES; PHOTOCONDUCTANCE; QUASI-STEADY-STATE PHOTOCONDUCTANCE;

CARRIER LIFETIME;

EID: 84949569515     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915763     Document Type: Conference Paper

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