Formation rates of iron-acceptor pairs in crystalline silicon

Journal of Applied Physics

Volumn 98, Issue 8, 2005, Pages

  Macdonald, Daniel ^a   Roth, Thomas ^a,c   Deenapanray, Prakash N K ^a   Bothe, Karsten ^b   Pohl, Peter ^b   Schmidt, Jan ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^c FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICON; DOPANT SPECIES; IRON-ACCEPTOR PAIRS;

ACTIVATION ENERGY; APPROXIMATION THEORY; CRYSTALLINE MATERIALS; DIFFUSION; ENTHALPY; SILICON;

IRON;

EID: 27744486765     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2102071     Document Type: Article

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