Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices

Semiconductor Science and Technology

Volumn 25, Issue 6, 2010, Pages

  Bera, M K ^a   Song, J ^a   Ahmet, P ^a   Kakushima, K ^a   Tsutsui, K ^a   Sugii, N ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ENERGY DISSIPATION; GATE DIELECTRICS; GERMANIUM; HIGH-K DIELECTRIC; INTERFACE STATES; LEAKAGE CURRENTS; METALLIC COMPOUNDS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; RECONFIGURABLE HARDWARE; SCANDIUM; SEMICONDUCTOR DEVICES; TRANSISTORS; VALENCE BANDS; YTTRIUM; YTTRIUM ALLOYS; YTTRIUM OXIDE;

ANNEALING TREATMENTS; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; HIGH- K GATE DIELECTRICS; METAL OXIDE SEMICONDUCTOR; PHOTOELECTRON ENERGY; POST-METALLIZATION ANNEALING; VALENCE BAND DISCONTINUITY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 78751564909     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/6/065008     Document Type: Article

References (33)

1. Kamata Y 2008 Mater. Today 11 30
2. Robertson J 2006 Rep. Prog. Phys. 69 327
3. Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
4. Hattangady S V, Mantini M J, Fountain G G, Rudder R A and Markunas R J 1992 J. Appl. Phys. 71 3842
5. Reinking D, Kammler M, Hoffmann N, Horn-von Hoegen M and Hofmann K R 1999 Electron. Lett. 35 503
6. Rosenberg J and Martin S C 1988 IEEE Electron Device Lett. 9 639
7. Jackson T N, Ransom C M and DeGelormo J F 1991 IEEE Electron Device Lett. 12 605
8. Shang H, Okorn-Schimdt H, Ott J, Kozlowski P, Steen S, Jones E C and Wong H-S P 2002 Tech. Dig.-Int. Electron Devices Meet. p 441
9. Ritenour A, Yu S, Lee M L, Lu N, Bai W, Pitera A, Fitzgerald E A, Kwong D L and Antoniadis D A 2003 Tech. Dig.-Int. Electron Devices Meet. 18.2.1
10. Whang S J, Lee S J, Gao F, Zhu N W, C X, Pan Ji Sheng, Tang L J and Kwong D L 2004 Tech. Dig.-Int. Electron Devices Meet. p 307
11. Nomura H, Kita K, Nishimura T and Toriumi A 2006 Extended Abstracts of SSDM pp 406-7
12. Kamata Y, Kamimuta Y, Ino T, Iijima R, Koyama M and Nishiyama A 2005 Tech. Dig.-Int. Electron Devices Meet. p 429
13. Kamata Y, Kamimuta Y, Ino T and Nishiyama A 2005 Japan. J. Appl. Phys. 44 2323
14. Choi C O, Kim H, Cui D, McIntyre P C and Saraswat K C 2005 IEEE Trans. Electron Devices 53 1509 (and references therein)
15. Choi C O, Kim H, Cui D, McIntyr P C and Saraswat K C 2004 IEEE Electron Device Lett. 25 613
16. Song J, Kakushima K, Ahmet P, Tsutsui K, Sugii N, Hattori T and Iwai H 2007 Japan. J. Appl. Phys. 46 L376
17. Song J, Kakushima K, Ahmet P, Tsutsui K, Sugii N, Hattori T and Iwai H 2007 Microelectron. Eng. 84 2336
18. Song J, Kakushima K, Ahmet P, Tsutsui K, Sugii N, Hattori T and Iwai H 2009 Microelectron. Eng. 86 1638
19. Dimoulas A et al 2007 Thin Solid Films 515 6337
20. Kawanago T, Tachi K, Song J, Kakushima K, Ahmet P, Tsutsui K, Sugii N, Hattori T and Iwai H 2007 Microelectron. Eng. 84 2235
21. Christen H M, Jellison G E Jr, Ohkubo I, Huang S, Reeves M E, Cicerrella E, Freeouf J L, Jia Y and Schlom D G 2006 Appl. Phys. Lett. 88 262906
22. Prabhakaran K, Maeda F, Watanabe Y and Ogino T 2000 Appl. Phys. Lett. 76 2244
23. Deegan T and Hughes G 1998 Appl. Surf. Sci. 123 66
24. Prabhakaran K, Maeda F, Watanabe Y and Ogino T 2000 Appl. Phys. Lett. 76 2244
25. Sergio T 1971 J. Electroanal. Chem. 33 351
26. Kita K, Takahashi T, Nomura H, Suzuki S, Nishimura T and Toriumi A 2008 Appl. Surf. Sci. 254 6100
27. Kita K, Nomura H, Nishimura T and Toriumi A 2006 ECS Trans. 3 71
28. Miyazaki S 2002 Appl. Surf. Sci. 190 66
29. Nicollian E H and Brews J R 1982 MOS (Metal Oxide Semiconductor) Physics and Technology (New York: Wiley-Interscience)
30. Bera M K, Song J, Kakushima K, Ahmet P, Tsutsui K, Sugii N, Hattori T and Iwai H 2009 ECS Trans. 25 67
31. Lee C H, Lin T D, Tung L T, Huang M L, Hong M and Kwo J 2008 J. Vac. Sci. Technol. B 26 1128
32. Evangelou E K, Mavrou G, Dimoulas A and Konofaos N 2007 Solid State Electron. 51 164
33. Dimoulas A et al 2007 Thin Solid Films 515 6337