Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2235-2238

  Kawanago, T ^a   Tachi, K ^a   Song, J ^a   Kakushima, K ^a   Ahmet, P ^a   Tsutsui, K ^a   Sugii, N ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

High k; MOSFET; Rare earth oxides; Vfb shift

Indexed keywords

ELECTRICAL CHARACTERIZATION; RARE EARTH OXIDES;

ANNEALING; ELECTRIC INSULATORS; ELECTRIC PROPERTIES; GATE DIELECTRICS; HIGH TEMPERATURE EFFECTS; MOSFET DEVICES;

LANTHANUM COMPOUNDS;

EID: 34248676844     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.115     Document Type: Article

References (5)

1. Fanciulli M., and Scarel G. Rare Earth Oxide Thin Films Growth Characterization and Applications (2007), Springer, Berlin
2. 3 films on silicon. Appl. Phys. Lett. 89 (2006) 062902
3. Zhao Yi., Toyama M., Kita K., Kyuno K., and Toriumi A. Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon. Appl. Phys. Lett. 88 (2006) 072904
4. 3 Buffer Layer for High Temperature Annealing, ECS 210th Meeting, Cancun, 2006, Abstract p.1132.
5. Wang X.P., Li M.-F., Ren C., Yu X.F., Shen C., Ma H.H., Chin A., Zhu C.X., Ning J., Yu M.B., and Kwong D.-L. Tuning Effective Metal Gate Work Function by a Novel Gate dielectric HfLaO for nMOSFET. IEEE Electron Dev. Lett. 27 (2006) 31-33